Data unit array structure of NAND flash memory and manufacturing method thereof

Abstract

The invention provides a data unit array structure of an NAND flash memory and a manufacturing method thereof. A fin is formed on a semiconductor substrate. The fin comprises a source layer, a channel layer and a drain layer or comprises a source layer and a drain layer, wherein the source layer, the channel layer and the drain layer are stacked in a vertical direction. A number of stacked structures are formed on the fin. The stacked structures comprise a tunnelling dielectric layer which covers the top and both sides of the fin, a charge trap layer covering the top and both sides of the tunnelling dielectric layer, a gate dielectric layer covering the top and both sides of the charge trap layer, and a gate covering the top and both sides of the gate dielectric layer. A string source which is connected with the source layer is formed on one end of the fin. A string drain which is connected with the drain layer is formed on the other end of the fin. According to the invention, the data unit array structure can continuously reduce the process size; the problem of reading interference of a data unit is solved; the data unit uses a TFET which is a device with double gates and has the advantages of fast switching speed and low shutdown current; and the data unit formation method is compatible with a traditional FinFET process, which simplifies the process and reduces the process cost.

Description

technical field [0001] The invention relates to a data unit array structure of NAND flash memory and a manufacturing method thereof, in particular to a method for manufacturing the data unit array structure of NAND flash memory by using a Fin Field Effect Transistor process and the obtained TFET data unit array structure. Background technique [0002] NAND flash is a non-volatile flash memory technology developed by Toshiba Corporation. It has a high cell density, can achieve high storage density, and has fast writing and erasing speeds. The unit size of NAND flash is almost half of that of NOR devices, which can provide higher capacity within a given die size, has fast writing and erasing speeds, and its main function is to store data. It is currently mainly used in digital camera flash memory card and MP3 player. [0003] Such as figure 1 As shown, the existing NAND flash memory includes a channel region 1 located on a semiconductor substrate, a tunnel dielectric layer 2...

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Problems solved by technology

[0009] The invention provides a data unit array structure of NAND flash memory and a manufacturing method thereof, which has a good capability of continuously shrinking the process size and solves the problem of reading interference of data units

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