Geometrically enhanced resistive random access memory (RRAM) cell and method of forming same

Abstract

A memory device (and method of making and using the memory device) includes a first electrode of conductive material, a second electrode of conductive material, and a layer transition metal oxide material that includes first and second elongated portions meeting each other at a sharp corner. Each of the first and second elongated portions is disposed between and in electrical contact with the first and second electrodes.

Description

technical field [0001] The present invention relates to non-volatile memory, and more particularly to resistive random access memory. Background technique [0002] Resistive Random Access Memory (RRAM) is a type of non-volatile memory. Typically, RRAM memory cells each include a layer of resistive dielectric material sandwiched between two conductive electrodes. Dielectric materials are generally insulating. However, by applying a suitable voltage across the dielectric layer, conductive paths (often referred to as filaments) can be formed through the layer of dielectric material. Once formed, the filaments can be "reset" (i.e., break or rupture, resulting in a high-resistance state on the RRAM cell) and set (i.e., re-form, resulting in lower resistance state on the RRAM cell). The low and high resistance states can be used to indicate a digital signal of "1" or "0" depending on the resistance state, thereby providing a programmable non-volatile memory cell that can store...

AI Technical Summary

Problems solved by technology

[0005] One of the disadvantages of RRAM memory cells is that the voltage and current required to form the filaments are relatively high (and can be significantly higher than those required to set and reset memory cells)

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