Formation method capable of reducing defects of epitaxial substrate

Abstract

The invention provides a formation method capable of reducing defects of an epitaxial substrate, which comprises the steps of firstly performing immersive defect removal treatment on the original epitaxial substrate so as to remove scratches and defects of the original epitaxial substrate, then performing polishing treatment, then acquiring the amount to be etched of different areas of the original epitaxial substrate through detecting and collecting surface topography data of the original epitaxial substrate and performing analysis on the topography data, determining process parameters required by different areas according to the amount to be etched, etching and removing the amount to be etched of different areas of the original epitaxial substrate in a targeted manner so as to remove the defects and scratches at the surface of the original epitaxial substrate, forming an epitaxial substrate with the surface being smooth, and thus enabling a subsequently formed epitaxial layer to be improved in performance.

Description

technical field [0001] The invention relates to the field of semiconductor device manufacturing, in particular to a forming method for reducing epitaxial substrate defects. Background technique [0002] In the traditional epitaxial substrate formation method, the monocrystalline silicon ingot grown at the far end and the near end is cut to form a block, and then the block is peripherally polished, and a positioning edge or a positioning V-groove is formed for The role of position indication; then, slice the block to obtain the epitaxial substrate; then, chamfer the epitaxial substrate; then, perform double-sided grinding (Double Disk Surface Grinding, DDSG); Surface grinding (Single Disk Surface Grinding, SDSG); then, double-sided polishing (Double Disk Surface Polishing); then, single-sided polishing (Single Disk Surface Polishing); finally formed on the formed epitaxial substrate epitaxial layer. [0003] However, there are following problems in the traditional method of...

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Problems solved by technology

[0003] However, there are following problems in the traditional method of epitaxial substrate formation: during mechanical processing, such as slicing, grinding and other processes, the machinery will inevitably cause scratches (Scratch) on the surface of the epitaxial substrate, resulting in scratches and defects If it becomes the starting point, it will cause crystal defects such as dislocation and stacking defects in the subsequently formed epitaxial layer; when the damage caused by mechanical processing to the epitaxial substrate is large, slip will occur in the subsequently formed epitaxial layer, resulting in The performance of the epitaxial layer is greatly reduced

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