A vdmos device with anti-single event effect

Abstract

The present invention provides a VDMOS device with anti-single event effect. The technical solution adopted in the present invention is mainly to arrange a first conductive type semiconductor buried layer in the second conductive type semiconductor body region to generate a hole barrier and prevent hole flow. Through the second conductivity type semiconductor body region, and the second conductivity type semiconductor column connected to the source is provided in the epitaxial layer under the gate to provide a hole path, and the present invention greatly improves the incidence of single particles incident on all positions. The anti-single event burning ability of VDMOS and the anti-single event gate punching ability can also be well improved. In addition, the anti-single event effect VDMOS device proposed in the present invention can effectively reduce the breakdown voltage of the device under the premise of ensuring the breakdown voltage. On-resistance, and because the coverage area of ​​the gate electrode is reduced, the Miller capacitance of the VDMOS structure is greatly reduced.

Description

technical field [0001] The invention relates to the technical field of semiconductor devices, in particular to a VDMOS device with anti-single event effect. Background technique [0002] With the rapid development of power electronics technology to high-frequency and high-power applications, VDMOS has become one of the irreplaceable important devices in the field of power electronics, and power electronic circuits using VDMOS are increasing. The device with this structure is usually formed by secondary diffusion or ion implantation technology. It is a multi-cell device, easy to integrate, high power density, multi-carrier conduction, and good frequency characteristics. At present, VDMOS is one of the mainstream devices of power MOS. As a power switch, VDMOS has the advantages of high withstand voltage, fast switching speed, low on-resistance, low drive power, good thermal stability, low noise and simple manufacturing process, and is widely used in switching power supplies, ...

AI Technical Summary

Problems solved by technology

But for this structure, when the single particle is incident on the position of the second conductivity type semiconductor pillar, it can obtain better anti-single event effect ability, and when the single particle is incident on other positions, such as the body contact area, the anti-single event effect ability is limited. very limited improvement

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