Variable-doping semiconductor material for power metal-oxide-semiconductor field-effect transistor (MOSFET) device and manufacturing method of variable-doping semiconductor material
A manufacturing method and semiconductor technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of difficult precise control of gas flow, difficult control of epitaxy process, narrow application range, etc., and achieve improved resistance to single particle burnout The ability to reduce the resistance of the collector area and the effect of a wide range of applications
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Embodiment 1
[0045] Such as Figure 7 As shown, a variable doping semiconductor material sheet for power MOSFET devices is characterized in that it includes a first conductivity type highly doped substrate 100, a first conductivity type low doping first epitaxial layer 101, a first conductivity type Type medium doped layer 102 and first conductivity type low doped second epitaxial layer 103.
[0046] The lowly doped first epitaxial layer 101 of the first conductivity type covers the highly doped substrate 100 of the first conductivity type.
[0047] The first low-doped second epitaxial layer 103 covers the first low-doped first epitaxial layer 101 .
[0048] The middle-doped layer 102 of the first conductivity type is located between the low-doped second epitaxial layer 103 of the first conductivity type and the first low-doped epitaxial layer 101 of the first conductivity type.
[0049]The middle doped layer 102 of the first conductivity type is partially embedded in the lowly doped fir...
Embodiment 2
[0056] A method for manufacturing a variable doped semiconductor material sheet for a power MOSFET device, characterized in that it comprises the following steps:
[0057] 1) Covering the first conductivity type low-doped first epitaxial layer 101 on the first conductivity type highly doped substrate 100 .
[0058] The method of forming the low-doped first epitaxial layer 101 of the first conductivity type includes normal pressure epitaxial growth. The temperature of the atmospheric pressure epitaxy is 1180°C±10°C.
[0059] 2) Doping impurities within a depth range of 1 μm on the upper surface of the low-doped first epitaxial layer 101 of the first conductivity type to form a medium-doped layer 102 of the first conductivity type.
[0060] The method of forming the middle-doped layer 102 of the first conductivity type includes implanting impurities with medium-energy ions.
[0061] The implantation energy of the medium energy ion implantation is 60-80KeV.
[0062] The medium...
Embodiment 3
[0071] The first conductivity type is N type.
[0072] Such as Figure 7 As shown, a variable doping semiconductor material sheet for power MOSFET is characterized in that: it is characterized in that it includes an N-type highly doped substrate 100, an N-type low-doped first epitaxial layer 101, an N-type medium doped impurity layer 102, N-type low-doped second epitaxial layer 103.
[0073] The N-type low-doped first epitaxial layer 101 covers the N-type highly-doped substrate 100 .
[0074] The N-type low-doped second epitaxial layer 103 covers the N-type low-doped first epitaxial layer 101 .
[0075] The N-type medium-doped layer 102 is located between the N-type low-doped second epitaxial layer 103 and the N-type low-doped first epitaxial layer 101 . The N-type medium-doped layer 102 is partially embedded in the N-type low-doped first epitaxial layer 101 and the N-type low-doped second epitaxial layer 103 .
[0076] The thickness of the N-type low-doped first epitaxial...
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