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Light emitting diode with quantum well protective layer and preparation method thereof

A technology of light-emitting diodes and protective layers, which is applied to semiconductor devices, electrical components, circuits, etc., can solve the problems of high and low customer return rates, improve the reverse collapse voltage, suppress electronic overflow, and enhance the use of The effect of longevity

Inactive Publication Date: 2017-10-27
ANHUI SANAN OPTOELECTRONICS CO LTD
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  • Description
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Problems solved by technology

Sometimes, the degree of electrostatic damage at the beginning is not high, and the electrical characteristics, luminous characteristics, and chip surface integrity of the LED are all undisputed, but this damage will gradually become obvious due to accumulation, and sometimes it may survive the entire product life cycle , so that the customer return rate of the product fluctuates

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  • Light emitting diode with quantum well protective layer and preparation method thereof
  • Light emitting diode with quantum well protective layer and preparation method thereof
  • Light emitting diode with quantum well protective layer and preparation method thereof

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Embodiment Construction

[0027] In the following paragraphs the invention is described more specifically by way of example with reference to the accompanying drawings. Advantages and features of the present invention will be apparent from the following description and claims. It should be noted that all the drawings are in a very simplified form and use imprecise scales, and are only used to facilitate and clearly assist the purpose of illustrating the embodiments of the present invention.

[0028] The invention provides a light-emitting diode with a quantum well protective layer, refer to the attached Figure 1~2 , the light emitting diode sequentially includes an N-type semiconductor layer 100, a stress release layer 200, a multi-quantum well structure layer 400, a low-temperature P-type layer 600 and a P-type semiconductor layer 700, wherein the N-type semiconductor layer 100 is n-type doped GaN The layer is mainly used to provide electrons, and the n-type doping is silicon, germanium, tin, lead, ...

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Abstract

The invention belongs to the technical field of semiconductors and especially relates to a light emitting diode with a quantum well protective layer and a preparation method thereof. Through setting an upper protective layer and a lower protective layer above and under a multiple-quantum well structure layer, the multiple-quantum well structure layer is coated inside, by means of the change of structures and energy barriers of a first sub protection layer, a second sub protection layer, a third sub protection layer and a fourth sub protection layer, the defect extension to the quantum well structure layer is reduced, and electron overflow and overflow phenomena are suppressed. A reverse collapse voltage degree is improved, the reverse overflow current is reduced, and the intensity of a lifetime test of an LED chip is strengthened.

Description

technical field [0001] The invention belongs to the technical field of semiconductors, and in particular relates to a light-emitting diode with a quantum well protective layer and a preparation method thereof, which are used to improve the service life of the light-emitting diode. Background technique [0002] ESD failure is a kind of chip damage caused by electrostatic discharge. This phenomenon is very important in MOS IC products. For LEDs, because white LEDs use non-conductive sapphire substrates, and the gap between the substrate and GaN and other materials due to lattice differences Matching will form internal defects (such as dislocations), and the damage to ESD is more obvious. Electrostatic discharge can produce immediate failure of semiconductor junctions or permanent drift in characteristics and potential damage, all of which lead to increased rates of device degradation. At present, there are several phenomena that can be used to help judge whether the chip is d...

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Application Information

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IPC IPC(8): H01L33/00H01L33/06H01L33/20
CPCH01L33/06H01L33/0075H01L33/20
Inventor 林继宏林兓兓蔡吉明张家宏
Owner ANHUI SANAN OPTOELECTRONICS CO LTD
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