A self-test method and device for non-volatile memory

A non-volatile, memory technology, applied in the field of memory, can solve the problems of rising cost of memory products and high testing cost

Active Publication Date: 2020-07-31
GIGADEVICE SEMICON (BEIJING) INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] In view of the above problems, the purpose of the embodiment of the present invention is to provide a non-volatile memory self-test method and a non-volatile memory self-test device, to solve the high test cost of the existing burn-in test method, resulting in memory products The problem of rising costs

Method used

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  • A self-test method and device for non-volatile memory
  • A self-test method and device for non-volatile memory
  • A self-test method and device for non-volatile memory

Examples

Experimental program
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Embodiment 1

[0025] refer to figure 2 , shows a flow chart of the steps of a non-volatile memory self-test method embodiment of the present invention, the non-volatile memory includes a self-test controller, the self-test controller can be embedded or integrated in the non-volatile memory, the non-volatile memory The first preset storage space of the volatile memory stores the startup sign written by the test equipment, the maximum number of tests and the information of the items to be tested, and the self-test method may specifically include the following steps:

[0026] S21. After the non-volatile memory is powered on, judge whether the start flag is an enable flag through the self-test controller.

[0027] Wherein, a non-volatile memory (NVRAM, Non-volatile memory) refers to a memory in which stored information will not disappear when the system is turned off or there is no power supply. For example, EPROM (Erasable Programmable Read-Only Memory, Erasable Programmable Read-Only Memory...

Embodiment 2

[0040] refer to image 3 , shows a flow chart of the steps of another non-volatile memory self-test method embodiment of the present invention, the non-volatile memory includes a self-test controller, the non-volatile memory is connected with the test equipment, and the first non-volatile memory A preset storage space stores the startup sign written by the test equipment, the maximum number of tests and the information of the items to be tested. The self-test method may specifically include the following steps:

[0041] S31. After the non-volatile memory is powered on, judge whether the startup flag is an enable flag through the self-test controller.

[0042] Wherein, the maximum number of tests and the items to be tested corresponding to the information of the items to be tested may be set during the production of the non-volatile memory according to the characteristics of the non-volatile memory, testing requirements, and the like.

[0043] S32, when the startup flag is the...

Embodiment 3

[0062] refer to Figure 4 , shows a structural block diagram of a self-test device embodiment of a non-volatile memory of the present invention, the non-volatile memory includes a self-test controller, and the first preset storage space of the non-volatile memory stores the data written by the test device The startup flag, the maximum number of tests and the information of the items to be tested, the self-test device can specifically include the following modules:

[0063] The judging module 41 is configured to judge whether the startup flag is an enable flag through the self-test controller after the non-volatile memory is powered on.

[0064] The test module 42 is used to test the non-volatile memory according to the information of the items to be tested by the self-test controller when the start flag is the enable flag, until the number of tests of each item to be tested corresponding to the item information to be tested is equal to the maximum test number of times, or unt...

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Abstract

The invention provides a self-test method and device of a nonvolatile memory. The nonvolatile memory comprises a self-test controller; and a first storage space of the nonvolatile memory stores a starting sign, a maximum test frequency and to-be-tested project information written by test equipment. The method comprises the following steps of: after electrification, judging whether the starting sign is an enable sign or not through the self-test controller; if the judging result is positive, testing the nonvolatile memory through the self-test controller according to the to-be-tested project information, and when a test frequency of each to-be-tested project is equal to the maximum test frequency or a test result of any to-be-tested project is that the nonvolatile memory loses efficacy, setting the starting sign in the first preset storage space as an ineffective sign; and recording corresponding project failure information to a second preset storage space of the nonvolatile memory through the self-test controller. According to the method and device, the ageing test is simple and convenient, the requirements, for test equipment, of the ageing test are greatly reduced, and the test cost is lower.

Description

technical field [0001] The invention relates to the technical field of memory, in particular to a non-volatile memory self-test method and a non-volatile memory self-test device. Background technique [0002] Due to the large capacity and high device density of the memory, there is a serious problem of early failure, and this problem is exacerbated as the size of the memory technology shrinks. The relationship between the failure probability of the memory and the number of uses is consistent with figure 1 The characteristic of the bathtub curve shown is that the failure probability of the memory is high at the beginning of use, and the failure probability of the memory will be greatly reduced after a certain number of uses, until the service life of the memory is reached, the failure probability of the memory will continue to increase. The reliability of the memory can be improved through the burn-in test. Aging test is to repeatedly erase, write, read and other operations...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C29/12
CPCG11C29/12
Inventor 胡洪
Owner GIGADEVICE SEMICON (BEIJING) INC
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