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A capacitance testing unit and capacitance testing method

A technology for capacitance testing and capacitance value, which is applied in the direction of measuring resistance/reactance/impedance, measuring devices, and measuring electrical variables, etc. It can solve problems such as the inability to effectively test the capacitance of non-metallic layers and metal electrodes, and the poor conductivity of non-metallic electrodes.

Inactive Publication Date: 2019-08-30
BOE TECH GRP CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Existing TFTs include: a light-shielding layer, a buffer layer, an active layer, a gate insulating layer, a gate electrode, and source-drain electrodes. For example, there will be mobile electrons in the light-shielding layer or active layer made of non-metallic materials, which will generate induction electrodes, thereby forming capacitance between the non-metallic layer and the gate electrode, and the capacitance will affect the TFT. The characteristics have a certain influence. In order to know how much the generated capacitance affects the TFT, it is necessary to test the capacitance between the gate electrode and the non-metal electrode. However, due to the poor conductivity of the non-metal electrode, the conventional capacitance test method cannot be used for non-metal electrodes. The capacitance between the metal layer and the metal electrode is effectively tested

Method used

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  • A capacitance testing unit and capacitance testing method
  • A capacitance testing unit and capacitance testing method
  • A capacitance testing unit and capacitance testing method

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Embodiment 1

[0049] figure 1 A schematic structural view of the capacitance testing unit provided in Embodiment 1 of the present invention, as figure 1 As shown, the capacitance test unit provided by the embodiment of the present invention includes: a non-metal electrode 10 and a first metal electrode 20 arranged oppositely and a dielectric layer arranged between the non-metal electrode 10 and the first metal electrode 20; the non-metal electrode At least one second metal electrode 30 is disposed on 10 , and there is an interval d between the orthographic projection of the second metal electrode 30 on the non-metal electrode 10 and the orthographic projection of the first metal electrode 20 on the non-metal electrode 10 .

[0050] Specifically, the non-metallic electrode 10 is disposed on a substrate 50 , wherein the substrate 50 is a glass substrate, a quartz substrate or a plastic substrate, and the glass substrate needs to be pre-cleaned before forming the non-metallic electrode 10 .

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Embodiment 2

[0061] Based on the inventive concepts of the foregoing embodiments, figure 2 A schematic structural diagram of a capacitance test unit provided in Embodiment 2 of the present invention, such as figure 2 As shown, the difference from the capacitance testing unit provided in Embodiment 1 is the dielectric layer structure in the capacitance testing unit.

[0062] The dielectric layer provided by the embodiment of the present invention includes: a third insulating layer 44 disposed on the non-metal electrode 10 . Wherein, the material of the third insulating layer 44 is silicon nitride, silicon oxide or a composite film of silicon nitride and silicon oxide.

[0063] It should be understood that the capacitance testing unit provided in the embodiment of the present invention can be used to test the capacitance between the active layer and the gate electrode of the top-gate thin film transistor.

[0064] Specifically, the top-gate thin film transistor includes: a light-shieldin...

Embodiment 3

[0068] Based on the inventive concepts of the foregoing embodiments, image 3 The schematic structural diagram of the capacitance test unit provided for the third embodiment of the present invention, such as image 3 As shown, compared with the capacitance test units provided in Embodiment 1 and Embodiment 2, the structure of the dielectric layer is different.

[0069] The dielectric layer provided by the embodiment of the present invention includes: a fourth insulating layer 45 disposed on the first metal electrode 20 . Wherein, the material of the fourth insulating layer 45 is silicon nitride, silicon oxide or a composite film of silicon nitride and silicon oxide.

[0070] It should be understood that the capacitance testing unit provided in the embodiment of the present invention can be used to test the capacitance between the active layer and the gate electrode of the bottom-gate TFT.

[0071] Specifically, the bottom gate thin film transistor includes: a gate electrode,...

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PUM

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Abstract

The embodiment of the invention discloses a capacitance testing unit and a capacitance testing method. The capacitance testing unit comprises a non metallic electrode and a first metal electrode which are arranged oppositely and a dielectric layer arranged between the non metallic electrode and the first metal electrode, wherein at least one second metal electrode is arranged on the non metallic electrode; and a gap exists between positive projection of the second metal electrode on the non metallic electrode and positive projection of the first metal electrode on the non metallic electrode. Through arranging the second metal electrode on the non metallic electrode and due to the fact that electron moving exists between the non metallic electrode and the second metal electrode, the capacitance value between the non metallic electrode and the metal electrode is acquired through measuring the capacitance between the first metal electrode and the second metal electrode, and the capacitance between the non metallic electrode and the metal electrode can be effectively tested.

Description

technical field [0001] The invention relates to capacitance measurement technology, in particular to a capacitance test unit and a capacitance test method. Background technique [0002] The array substrate of the display is provided with a thin film transistor (Thin Film Transistor, TFT for short), and the display control is realized through the TFT. After the TFT is manufactured, the TFT needs to be tested to determine whether the TFT is defective. [0003] Existing TFTs include: a light-shielding layer, a buffer layer, an active layer, a gate insulating layer, a gate electrode, and source-drain electrodes. For example, there will be mobile electrons in the light-shielding layer or active layer made of non-metallic materials, which will generate induction electrodes, thereby forming capacitance between the non-metallic layer and the gate electrode, and the capacitance will affect the TFT. The characteristics have a certain influence. In order to understand how much the gen...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01R27/26
Inventor 孙雪菲刘建宏张斌李正亮
Owner BOE TECH GRP CO LTD