Induction heating device for thin film materials

A technology of induction heating device and thin film material, applied in metal material coating process, gaseous chemical plating, coating and other directions, can solve problems such as increasing the difficulty of debugging and control, achieve simple structure, offset heat loss, and increase temperature The effect of uniformity

Active Publication Date: 2017-11-07
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, due to the need to control multiple induction power supplies at the same time and considering the complex electromagnetic induction phenomenon in the chamber, the induction coils in each area will affect each other, which increases the difficulty of debugging and control

Method used

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  • Induction heating device for thin film materials
  • Induction heating device for thin film materials

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Embodiment Construction

[0026] In order to make the objectives, technical solutions, and advantages of the present disclosure clearer, the following further describes the present disclosure in detail with reference to specific embodiments and drawings.

[0027] It should be noted that in the drawings or description of the specification, similar or identical parts use the same drawing numbers. The implementations not shown or described in the drawings are those known to those of ordinary skill in the art. In addition, although this article may provide an example of a parameter containing a specific value, it should be understood that the parameter does not need to be exactly equal to the corresponding value, but can be approximated to the corresponding value within acceptable error tolerances or design constraints. The directional terms mentioned in the embodiments, such as "upper", "lower", "front", "rear", "left", "right", etc., are only directions with reference to the drawings and are not used to lim...

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Abstract

The invention provides an induction heating device for thin film materials. The induction heating device comprises a tray and an induction coil. The induction coil is arranged below the tray and used for heating the tray. The induction coil is in a plane spiral shape and comprises p turns of coils. The first turn of coil is the innermost turn of coil of the induction coil, the pth turn of coil is the outermost turn of coil, the mth turn of coil and the nth turn of coil are located between the first turn of coil and the pth turn of coil, and 1<m<n<p. The distance between any two adjacent turns of coils from the first turn of coil to the mth turn of coil and the distance between any two adjacent turns of coils from the nth turn of coil to the pth turn of coil are smaller than the turn-to-turn distance between any two adjacent turns of coils from the mth turn of coil to the nth turn of coil. According to the induction heating device, the overall temperature uniformity of the tray and the temperature of a center area of the tray are improved, the requirements of the large-size multi-piece thin film materials for growth at the high temperature are met, and the growing efficiency and quality of the thin film materials are improved.

Description

Technical field [0001] The present disclosure relates to the field of thin film material growth equipment manufacturing, and more particularly to an induction heating device for thin film material growth. Background technique [0002] Metal organic chemical vapor deposition (MOCVD) equipment is one of the key equipment for the epitaxial growth of compound semiconductor materials. It is particularly suitable for large-scale production in the semiconductor industry. In recent years, it has been epitaxially grown gallium nitride, indium phosphide, gallium arsenide, oxide The most important equipment for compound semiconductors such as zinc. The most important factor that directly affects the epitaxial production capacity and quality of semiconductor materials is the temperature and temperature uniformity of the substrate during growth. The substrate sheet is placed on the tray and heated by heat conduction. Therefore, how to improve the maximum temperature and temperature uniformit...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/46
CPCC23C16/46
Inventor 王晓亮殷海波梅书哲王权徐健凯肖红领李巍姜丽娟
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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