Apparatus for plasma processing and its temperature control method and calibration method
A technology of a processing device and a calibration method, which is applied in the manufacture of semiconductor/solid-state devices, discharge tubes, electrical components, etc., can solve the problems of difficult installation of filters, difficult spatial arrangement of power wires and temperature detection transmission lines, and complex structures.
Active Publication Date: 2019-08-13
ADVANCED MICRO FAB EQUIP INC CHINA
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Problems solved by technology
[0005] Therefore, the use of a base with a matrix multi-zone temperature control structure will bring about difficulties in the spatial arrangement of power wires and temperature detection transmission lines, difficulty in installing filters, and complex structures. Simplified methods are needed in the industry.
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[0018] The following is attached image 3 , to further illustrate specific embodiments of the present invention.
[0019] The invention discloses a plasma processing device capable of realizing multi-zone matrix temperature control. The plasma processing device includes a plasma reaction chamber. shape. When performing plasma etching, the reactive gas is supplied to the plasma reaction chamber, and the corresponding upper electrode and lower electrode are provided in the plasma reaction chamber, which are used to excite the reactive gas to generate plasma, so that the plasma reacts during the process The cavity is filled with plasma (plasma).
[0020] At the bottom of the plasma reaction chamber, there is a base for placing wafers, and an electrostatic chuck for absorbing wafers is installed in the base, and heaters or refrigerant flow paths can be installed in the electrostatic chuck or base as required Temperature Control System. In practical application, the lower elect...
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The invention provides a temperature calibrating method of a plasma processing device. The plasma processing device comprises a heater in the plasma processing device. The heater comprises a plurality of controllable independent heating areas. The temperature calibrating method comprises the steps of a plasma processing step, igniting the plasma in a reaction chamber for processing a substrate, and simultaneously stopping operation of a thermal imaging device; and a temperature calibrating step, extinguishing the plasma, detecting the temperature of the upper surface of the whole substrate and obtaining substrate surface temperature distribution, comparing objective process temperature distribution data and the detected substrate surface temperature distribution data by a temperature controller, and controlling a heating driving circuit according to a comparison result so that the substrate surface temperature distribution accords with the objective process temperature distribution.
Description
technical field [0001] The invention relates to the technical field of semiconductor processing, in particular to a multi-zone temperature control method and a temperature calibration method suitable for a base of a plasma processing device. Background technique [0002] Plasma processing devices are widely used in semiconductor wafer processing processes, such as figure 1 Shown is a typical plasma processing device structure diagram. The plasma processing device includes a reaction chamber 100. The bottom of the reaction chamber includes a pedestal for supporting wafers to be processed. The pedestal includes a lower electrode 10. The lower electrode 10 starts with a coolant pipe 11 for heat dissipation of the pedestal. A heater 21 is also included above the lower electrode 10. The heater 21 is made of insulating material, and a heating device 29 such as (heating resistance wire) is sandwiched between the insulating material layers. The upper part of the heater 21 is conne...
Claims
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IPC IPC(8): H01J37/32H01L21/67H01L21/683
CPCH01J37/32H01J37/32522H01J37/32724H01L21/67248H01L21/6831H01L21/6833
Inventor 谢林祝飞翼李天笑
Owner ADVANCED MICRO FAB EQUIP INC CHINA