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Integrated acoustic transducer with reduced propagation of undesired acoustic waves

An acoustic transducer, acoustic technology, applied in the direction of semiconductor electrostatic transducer, ultrasonic/sonic/infrasonic diagnosis, sensor, etc., can solve the problem of not ensuring the reduction of reflection

Inactive Publication Date: 2017-11-10
STMICROELECTRONICS SRL
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] However, known solutions do not ensure sufficient reflection reduction due to the presence of existing interfaces

Method used

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  • Integrated acoustic transducer with reduced propagation of undesired acoustic waves
  • Integrated acoustic transducer with reduced propagation of undesired acoustic waves
  • Integrated acoustic transducer with reduced propagation of undesired acoustic waves

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0020] figure 2 An embodiment of an acoustic transducer device is shown, generally indicated by reference numeral 10 .

[0021] The acoustic transducer device 10 comprises a transducer element 15 formed in a substrate 25 of semiconductor material. The substrate 25 has a cavity 19 delimiting the membrane 16 at the bottom, a first electrode 20 and a second electrode 21 being arranged above the membrane 16 and on the bottom of the cavity 19, respectively. The substrate 15 (typically monocrystalline and / or polycrystalline silicon) may be traversed by a via 26 through a conductive material.

[0022] On the side of the substrate 25 facing away from the membrane, the ASIC 30 is bonded to the substrate 25 . The ASIC 30 has a first side 30A and a second side 30B, and includes a substrate 29 forming an active region 31 facing the first side 30A. The active area 31 houses electronic circuitry (not shown) which is connected to the substrate 25 of the acoustic transducer 15 via pads 27...

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PUM

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Abstract

The acoustic device has a micromachined acoustic transducer element (15); an acoustically attenuating region (40); and an acoustic matching region (32) arranged between the acoustic transducer element (15) and the acoustically attenuating region (40). The acoustic transducer element (15) is formed in a first substrate (25) housing a cavity (19) delimiting a membrane (16). A second substrate (30) of semiconductor material integrating an electronic circuit is arranged between the acoustic transducer element (15) and the acoustically attenuating region (40). The acoustic matching region (32) has a first interface (32A) with the second substrate (30) and a second interface (32B) with the acoustically attenuating region (40). The acoustic matching region (32) has an impedance matched to the impedance of the second substrate (30) in proximity of the first interface (32A), and an impedance matched to the acoustically attenuating region (40) in proximity of the second interface (32B).

Description

technical field [0001] The present invention relates to an integrated acoustic transducer with reduced propagation of undesired sound waves. Background technique [0002] Integrated acoustic transducers manufactured using semiconductor technology are known and operate according to the capacitive principle. In some applications, these transducers are used to transduce ultrasound. In this case, whether capacitive (CMUT-capacitive micromachined ultrasonic transducer) or piezoelectric (PMUT-piezoelectric micromachined ultrasonic transducer), they are called MUT (micromachined device). For example, CMUTs are used in ultrasound image generation systems for medical diagnosis. [0003] Examples of this type of transducer element are in figure 1 is shown in . [0004] figure 1 The transducer element of , generally designated with reference numeral 1 , comprises a membrane 2 (for example silicon nitride) suspended over a cavity 3 and formed in or on a silicon chip 4 . Chamber 3...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H04R9/06H04R9/02
CPCH04R9/02H04R9/06H04R2400/11A61B8/4483B06B1/067B06B1/0685G10K9/22G10K11/02H04R19/005B06B1/0292B06B1/0644
Inventor M·莫里利F·夸利亚F·F·R·托亚M·萨姆比G·巴里拉罗
Owner STMICROELECTRONICS SRL