Semiconductor memory device

Abstract

The invention provides a semiconductor memory device. The device includes a plurality of memory arrays, a plurality of word line driving circuits and a plurality of sensing amplifying circuits. The plurality of word line driving circuits are respectively disposed between the above-mentioned plurality of memory arrays in a first direction which is parallel to the above-mentioned plurality of memory arrays, and each thereof is connected with one of the above-mentioned plurality of memory arrays in a coupled manner. The plurality of sensing amplifying circuits are respectively disposed between the above-mentioned plurality of memory arrays in a second direction which is parallel to the above-mentioned plurality of memory arrays, and each thereof is connected with one of the above-mentioned plurality of memory arrays in the coupled manner. A region between the word line driving circuit and the sensing amplifying circuit corresponding to each of the plurality of memory arrays includes a plurality of control circuits. All transistors included by the above-mentioned plurality of control circuits are NMOS transistors. According to the device, the intersection region between the word line driving circuit and the sensing amplifying circuit can be enabled to achieve more efficient use.

Description

technical field [0001] The present invention relates to a semiconductor memory, in particular to a semiconductor memory in which the control circuit arranged in the intersecting area of ​​the word line driver circuit and the sense amplifier circuit is composed of NMOS transistors. Background technique [0002] The semiconductor memory is an integrated circuit (Integrated Circuit, IC) made of a silicon (Si) chip. Semiconductor memory devices are mainly classified into two types, volatile memory devices and nonvolatile memory devices. A volatile memory device is a memory device that loses stored data when power is interrupted. Volatile memory devices include, for example, Static Random Access Memory (SRAM), Dynamic Random Access Memory (Dynamic Random Access Memory, DRAM), and Synchronous Dynamic Random Access Memory (Synchronous DRAM, SDRAM). A non-volatile memory device is a memory device that retains stored data even when power is interrupted. Non-volatile memory devices...

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Problems solved by technology

Therefore, as the area of ​​area A shrinks, if the original control circuit is to be completely routed (layout) to area A, the difficulty of layout will also increase accordingly.

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