Back surface annealing method and laser annealing system of insulated gate bipolar transistor (IGBT) silicon wafer
A technology for laser annealing and silicon wafers, which is applied in the fields of electrical components, semiconductor/solid-state device manufacturing, circuits, etc., and can solve the problems that silicon-based surface annealing cannot meet customer needs, etc.
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[0037] The specific embodiments of the present invention are given below in conjunction with the accompanying drawings, but the present invention is not limited to the following embodiments. Advantages and features of the present invention will be apparent from the following description and claims. It should be noted that all the drawings are in very simplified form and use imprecise ratios, which are only used for the purpose of conveniently and clearly assisting in describing the embodiments of the present invention.
[0038] Please refer to figure 2 , figure 2 Shown is a flow chart of the back annealing method of the IGBT silicon wafer in a preferred embodiment of the present invention. The present invention proposes a kind of back annealing method of IGBT silicon chip, comprises the following steps:
[0039] Step S100: completing the front process of the IGBT silicon wafer;
[0040] Step S200: performing a thinning process on the back of the silicon wafer, and grindi...
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