Organic thin film transistor preparation method and preparation device
A technology for organic thin films and preparation devices, which is applied in the manufacture of semiconductor/solid-state devices, electric solid-state devices, semiconductor devices, etc., and can solve the problems of difficulty in controlling the direction of atomic diffusion of gaseous evaporation materials, slow evaporation speed, and low evaporation rate, etc. problems, to achieve the effect of saving organic semiconductor layer source materials, improving evaporation speed and uniformity
Active Publication Date: 2020-04-14
TSINGHUA UNIV +1
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Problems solved by technology
Moreover, because it is difficult to control the diffusion direction of the gaseous evaporation material atoms, most of the evaporation materials cannot be attached to the surface of the substrate to be plated, resulting in problems such as low evaporation rate and slow evaporation speed.
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[0019] The method and device for preparing an organic thin film transistor of the present invention will be further described in detail below in conjunction with the accompanying drawings.
[0020] see Figure 1 to Figure 3 , the embodiment of the present invention provides a method for preparing an organic thin film transistor 200, including the steps of preparing an organic semiconductor layer 230, a source electrode 220, a drain electrode 240, a gate electrode 250, and an insulating layer 260 on an insulating substrate 210. The steps of layer 230 include:
[0021] S1, provide an evaporation source 110, the evaporation source 110 includes a carbon nanotube film structure 112 and an organic semiconductor layer source material 114, the carbon nanotube film structure 112 is a carrier, and the organic semiconductor layer source material 114 is arranged on the carbon nanotube The surface of the tube-film structure 112 is carried by the carbon nanotube-film structure 112; and
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Abstract
The invention provides a method for preparing an organic thin film transistor, which includes the steps of preparing an organic semiconductor layer, a source electrode, a drain electrode, a gate and an insulating layer on an insulating substrate. The step of preparing the organic semiconductor layer includes: providing an evaporation source, The evaporation source includes a carbon nanotube film structure and an organic semiconductor layer source material, the carbon nanotube film structure is a carrier, the organic semiconductor layer source material is arranged on the surface of the carbon nanotube film structure, and is carried by the carbon nanotube film structure , the source material of the organic semiconductor layer is the material of the organic semiconductor layer or the precursor used to form the organic semiconductor layer, and the precursor reacts to form the organic semiconductor layer during the evaporation process; and the evaporation source and the insulating substrate They are arranged oppositely and at intervals, and input electromagnetic wave signals or electric signals to the carbon nanotube film structure to evaporate the source material of the organic semiconductor layer, and evaporate and deposit the organic semiconductor layer on the insulating substrate. The invention also provides a preparation device of the organic thin film transistor.
Description
technical field [0001] The invention relates to a preparation method and a preparation device of an organic thin film transistor. Background technique [0002] Organic thin-film transistor (OTFT) is a thin-film transistor whose semiconductor layer is made of organic materials. It has many characteristics such as light weight, flexibility, and low manufacturing cost. It has been used in electronic paper, sensors, and memories. Show potential applications in displays and integrated circuits. The organic semiconductor layer can be formed on the surface of the insulating substrate by spin coating and etching. However, the organic semiconductor material is sensitive to the solvent in the photolithography process, which increases the difficulty of preparation. The semiconductor layer of a traditional thin film transistor can be formed by evaporation. However, in order to form a uniform organic semiconductor layer, it is necessary to form a uniform gaseous evaporation material aro...
Claims
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IPC IPC(8): H01L51/40
CPCH10K71/164C23C14/12C23C14/243C23C14/26H10K85/221H10K10/488H10K10/491C23C14/24H01L21/0262
Inventor 魏洋范守善
Owner TSINGHUA UNIV