Microwave device circuit coupling transmission performance testing method taking double gold bonding wire mutual induction into account

Abstract

The invention discloses a microwave device circuit coupling transmission performance testing method taking double gold bonding wire mutual induction into account. The method includes the steps that structural parameters, electromagnetic parameters and material attributes of double gold bonding wires are determined; the ith gold bonding wire is equivalent to a resistor and an inductor, and welded discs are equivalent to two plane-parallel capacitors; an equivalent two-port network form between the ith bonding wire and the welded dics at the two ends of the ith bonding wire is determined; the wire length and the skin depth are calculated; a serial resistor Ri, an inductance value, a mutual inductance value, a serial inductor Li, an electrode plate interval and a parallel capacitor Ci which are in the network are determined; whether or not the double gold bonding wires are equivalent to the welded discs at the two ends of the double gold bonding wires is judged; under the double gold bonding wires, the equivalent two-port network form, an equivalent impedor, a serial resistor R, a serial inductor L, a parallel capacitor C and open-circuit impedance parameters are determined; microwave device transmission parameters are calculated; a coupling model is established; the microwave device transmission performance is calculated under the double gold bonding wires. The microwave device circuit coupling transmission performance testing method taking the double gold bonding wire mutual induction into account achieves the purpose that the microwave device transmission performance is rapidly predicted and analyzed under the different structural parameters of the double gold bonding wires.

Description

technical field [0001] The invention belongs to the technical field of microwave radio frequency circuits, and in particular relates to a method for predicting the coupling transmission performance of a microwave device circuit considering the mutual inductance of two gold wire bonding wires. Background technique [0002] With the development of information electronics technology, microwave devices such as millimeter wave and micron wave are widely used in communication, radar, aerospace, navigation and other fields. With the development of electronic components becoming increasingly dense, integrated and miniaturized, this puts forward more stringent requirements for the assembly process of microwave devices, and the signal transmission between microwave devices is mainly realized by gold wire bonding. , so the structural parameters of gold wire bonding will directly affect the transmission performance of microwave signals. [0003] Different from the interconnection wires...

AI Technical Summary

Problems solved by technology

However, currently, for the analysis of the influence mechanism of the double gold wire bonding interconnection process, engineers rely more on empirical data for circuit structure design, without considering the relationship between the structural parameters of the double gold wire bonding wires and the transmission performance of microwave devices. coupling relationship

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