Manufacturing method of semiconductor device, semiconductor device and electronic device

A manufacturing method and semiconductor technology, which is applied in semiconductor/solid-state device manufacturing, circuits, electrical components, etc., can solve the problems of increased sidewall roughness of key dimensions, performance that cannot meet the predetermined design, device impact, etc., and achieve good sidewall roughness High degree, good key size, good effect of device performance

Inactive Publication Date: 2017-12-15
SEMICON MFG INT (SHANGHAI) CORP +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Moreover, in order to form the epitaxial doped silicon layer, before the silicon epitaxial growth, it is necessary to remove the oxide layer (formed by ambient oxidation) of the semiconductor substrate surface layer at the bottom of the channel opening. This step is carried out by using hydrofluoric acid wet method Then, as mentioned above, the interlayer dielectric layer also

Method used

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  • Manufacturing method of semiconductor device, semiconductor device and electronic device
  • Manufacturing method of semiconductor device, semiconductor device and electronic device
  • Manufacturing method of semiconductor device, semiconductor device and electronic device

Examples

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Embodiment 1

[0029] The following will refer to figure 2 as well as Figure 3A ~ Figure 3E A method for fabricating a semiconductor device according to an embodiment of the present invention will be described in detail.

[0030] First, step 201 is performed: providing a semiconductor substrate 300, on which a stacked structure consisting of multiple layers of staggered dummy dielectric layers 301 and interlayer dielectric layers 302 is formed, the dummy dielectric The layer 301 is formed between adjacent interlayer dielectric layers 302, and a trench 303 is formed in the interlayer dielectric layer 302 and the dummy dielectric layer 301, and the trench 303 exposes the substrate 300, so formed structure such as Figure 3A shown.

[0031]Wherein, the semiconductor substrate 300 can be at least one of the materials mentioned below: Si, Ge, SiGe, SiC, SiGeC, InAs, GaAs, InP or other III / V compound semiconductors, and also includes multiple semiconductors composed of these semiconductors. ...

Embodiment 2

[0048] The present invention also provides a semiconductor device, such as Figure 4 As shown, the semiconductor device 400 includes: a semiconductor substrate 401, on which a multi-layer interleaved dummy dielectric layer 402 and an interlayer dielectric layer 403 are formed, and the dummy dielectric layer 402 is formed Between the adjacent interlayer dielectric layers 403, a trench 404 is formed in the interlayer dielectric layer 403 and the dummy dielectric layer 402, and a trench 404 is formed on the semiconductor substrate 401 at the bottom of the trench 404. semiconductor layer 405 .

[0049] Wherein the semiconductor substrate 401 can be at least one of the materials mentioned below: Si, Ge, SiGe, SiC, SiGeC, InAs, GaAs, InP or other III / V compound semiconductors, and also includes multilayers composed of these semiconductors The structure or the like may be silicon-on-insulator (SOI), silicon-on-insulator (SSOI), silicon-germanium-on-insulator (S-SiGeOI), silicon-germ...

Embodiment 3

[0055] Still another embodiment of the present invention provides an electronic device, including the above-mentioned semiconductor device and an electronic component connected to the semiconductor device. Wherein, the semiconductor device includes: a semiconductor substrate, on which a multi-layer interlayer dielectric layer and a dummy dielectric layer are formed, and the dummy dielectric layer is formed on an adjacent layer Between the interlayer dielectric layers, trenches are formed in the interlayer dielectric layer and the dummy dielectric layer, and a semiconductor layer is formed on the semiconductor substrate at the bottom of the trenches.

[0056]The semiconductor substrate can be at least one of the materials mentioned below: Si, Ge, SiGe, SiC, SiGeC, InAs, GaAs, InP or other III / V compound semiconductors, including multilayer structures composed of these semiconductors etc. or silicon-on-insulator (SOI), silicon-on-insulator (SSOI), silicon-germanium-on-insulator ...

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Abstract

The invention provides a manufacturing method of a semiconductor device, the semiconductor device and an electronic device. The manufacturing method comprises the steps of: providing a semiconductor substrate, wherein a plurality of interlayer dielectric layers and virtual dielectric layers which are laminated in a staggered manner are formed on the semiconductor substrate, each virtual dielectric layer is formed between the adjacent interlayer dielectric layers, grooves are formed in the interlayer dielectric layers and the virtual dielectric layers, and the grooves expose the substrate; forming sacrificial oxide layers on side walls of the grooves; removing the sacrificial oxide layers and oxide layers, on the surface layer of the semiconductor substrate, exposed at the bottom parts of the grooves; and forming semiconductor layers on the semiconductor substrate at the bottom parts of the grooves. The manufacturing method can protect the interlayer dielectric layers against damage, thus cannot enlarge the critical size of groove open holes, cannot influence the sidewall roughness of the groove open holes, and further improve the performance of the final device. The semiconductor device and the electronic device have better performance.

Description

technical field [0001] The present invention relates to the technical field of semiconductors, in particular to a semiconductor device, a manufacturing method thereof, and an electronic device. Background technique [0002] With the development of semiconductor manufacturing technology, flash memory (flash memory) with faster access speed has been developed in terms of storage devices. Flash memory has the characteristics that information can be stored, read, and erased multiple times, and the stored information will not disappear after power failure. Therefore, flash memory has become a popular choice for personal computers and electronic devices. A widely used type of non-volatile memory. [0003] In recent years, with the development of planar flash memory, semiconductor production technology has made great progress, but with the continuous reduction in size, planar flash memory has almost reached the size limit and cannot be further reduced. In order to solve the diffi...

Claims

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Application Information

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IPC IPC(8): H01L21/762
CPCH01L21/762H01L21/76224
Inventor 刘佳磊
Owner SEMICON MFG INT (SHANGHAI) CORP
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