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A method of manufacturing ltcc substrate with rough bottom and ltcc substrate

A substrate and rough technology, which is applied in semiconductor/solid-state device manufacturing, semiconductor/solid-state device parts, semiconductor devices, etc. Small warpage, avoiding substrate warping, and smooth glue removal

Active Publication Date: 2020-05-22
THE 41ST INST OF CHINA ELECTRONICS TECH GRP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] To sum up, the existing LTCC substrates have the defects of small bottom roughness, poor adhesion of the metal layer, tight bonding between the bottom and the setter when the substrate is co-fired, which is not conducive to debinding, and the substrate is easy to warp

Method used

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  • A method of manufacturing ltcc substrate with rough bottom and ltcc substrate
  • A method of manufacturing ltcc substrate with rough bottom and ltcc substrate
  • A method of manufacturing ltcc substrate with rough bottom and ltcc substrate

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Embodiment approach 2

[0048] A fabrication method for LTCC substrates with rough bottoms, such as figure 2 As shown, the steps of the method include:

[0049] a. Prepare a base plate with a rough surface,

[0050]The bottom plate in this embodiment is a stainless steel plate with a length×width×height of 172mm×172mm×15mm, which is used for lamination of 6-inch (152mm×152mm) green ceramic sheets.

[0051] b. Place an isolation film on the bottom plate,

[0052] The isolation film used in this embodiment is a polyester film with a thickness of 30 microns, and the function of the isolation film is to prevent the green ceramic sheet from sticking to the base plate during isostatic pressing. The isolation film is fixed on the bottom plate with adhesive tape to avoid position changes during subsequent operations.

[0053] c. Align the green ceramic sheets in order from the bottom layer to the top layer and stack them on the isolation film to form a laminated body.

[0054] In this embodiment, the al...

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Abstract

The invention discloses a method for manufacturing an LTCC substrate with a rough bottom and the LTCC substrate. The method includes sequentially laying a bottom plate and an isolation film, the contact surface between the bottom plate and the isolation film is configured as a rough surface, and the green ceramic sheet is placed from the bottom layer to the The top layer is aligned in order and stacked on the isolation film to form a laminate. The stacked assembly is vacuum-packed and then subjected to isostatic pressing. The rough surface improves the adhesion of the metal layer at the bottom of the LTCC substrate, and the rough bottom At the same time, the adhesive discharge channel of the LTCC substrate during co-firing is improved, and the adhesive discharge is smoother, avoiding substrate warpage, deformation, cracks, etc., and reducing the warpage of the LTCC substrate.

Description

technical field [0001] The present invention relates to a method of manufacturing an LTCC substrate with a rough bottom and the LTCC substrate. Background technique [0002] LTCC has excellent electrical, thermal and mechanical properties, and can meet the technical requirements of multi-chip assembly or single-chip packaging of low-frequency, digital, radio frequency and microwave devices. It has developed rapidly and its technology has gradually matured. [0003] With the application of LTCC technology in military, aerospace, aviation, communication, computer, automobile, medical, and consumer electronics products, the requirements for the reliability of LTCC circuits are getting higher and higher. [0004] In order to meet the demand for high power, LTCC substrates often need to be welded on heat dissipation substrates with high thermal conductivity such as tungsten copper, molybdenum copper, aluminum-based silicon carbide, silicon aluminum alloy, etc., which requires the...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/50H01L23/13
CPCH01L21/50H01L23/13
Inventor 宋振国王斌路波
Owner THE 41ST INST OF CHINA ELECTRONICS TECH GRP