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A method for preparing black phosphorus two-dimensional materials based on plasma immersion implantation technology

A technology of plasma and two-dimensional materials, which is applied in the field of preparation of black phosphorus two-dimensional materials by ion plasma immersion implantation technology, can solve the problems of unfavorable industrial application, difficulty in increasing the protective layer, cost, instability, etc., and achieve simplification and improvement of the preparation method. High stability and high production efficiency

Active Publication Date: 2019-10-25
SHENZHEN INST OF ADVANCED TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in this invention, the phosphorus oxide protective layer formed on the surface of the black phosphorus two-dimensional material is very unstable and easily reacts with water in the air, and further adding other protective layers increases the difficulty and cost of operation, which is not conducive to industrial application

Method used

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  • A method for preparing black phosphorus two-dimensional materials based on plasma immersion implantation technology
  • A method for preparing black phosphorus two-dimensional materials based on plasma immersion implantation technology
  • A method for preparing black phosphorus two-dimensional materials based on plasma immersion implantation technology

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Effect test

Embodiment 1

[0049] A method for preparing black phosphorus two-dimensional material using plasma immersion implantation technology, comprising the following steps:

[0050] (1) Transfer black phosphorus crystals with a thickness of 97nm to the surface of silicon dioxide / silicon wafer, soak in acetone, heat to 50°C, soak for 30min, remove impurities on the surface, and obtain a sample;

[0051] (2) Put the sample on the target stage of the plasma immersion implantation equipment;

[0052] (3) Vacuum until the vacuum degree in the vacuum chamber is 5×10 -3 Pa;

[0053] (4) Pass into hydrogen, open plasma generator, the flow rate of hydrogen is 150sccm, and air pressure is 0.15Pa, adopts radio frequency to ionize hydrogen, radio frequency power is 200W, and pulse bias is-100V, and the hydrogen plasma that produces begins to black phosphorus The crystal was etched for 15 minutes to obtain a black phosphorus two-dimensional material with a thickness of 42 nm.

Embodiment 2

[0055] A method for preparing black phosphorus two-dimensional material using plasma immersion implantation technology, comprising the following steps:

[0056] (1) Transfer black phosphorus crystals with a thickness of 69nm to the surface of silicon dioxide / silicon wafer, soak in acetone, heat to 50°C, soak for 30min, remove the impurities on the surface, and obtain the sample;

[0057] (2) Put the sample on the target stage of the plasma immersion implantation equipment;

[0058] (3) Vacuum until the vacuum degree in the vacuum chamber is 5×10 -3 Pa;

[0059] (4) feed hydrogen, open the plasma generating device, the flow rate of hydrogen is 150sccm, the air pressure is 0.15Pa, adopt radio frequency to ionize hydrogen, radio frequency power is 200W, pulse bias is-120V, the hydrogen plasma that produces begins to black phosphorus The crystal was etched for 15 minutes to obtain a black phosphorus two-dimensional material with a thickness of 16 nm.

[0060] It can be seen fro...

Embodiment 3

[0062] A method for preparing black phosphorus two-dimensional material using plasma immersion implantation technology, comprising the following steps:

[0063] (1) Transfer black phosphorus crystals with a thickness of 80nm to the surface of silicon dioxide / silicon wafer, and soak with acetone to remove impurities on the surface to obtain a sample;

[0064] (2) Put the sample on the target platform in the plasma immersion implantation equipment;

[0065] (3) Vacuum until the vacuum degree in the vacuum chamber is 5×10 -3 Pa;

[0066] (4) Pass into hydrogen, open plasma generator, the flow rate of hydrogen is 150sccm, and air pressure is 0.15Pa, adopts radio frequency to ionize hydrogen, radio frequency power is 200W, and pulse bias is-100V, and the hydrogen plasma that produces begins to black phosphorus The crystal is etched, the etching time is 20min, and the black phosphorus two-dimensional material with a thickness of 15nm is obtained;

[0067] (5) Turn off the plasma ...

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Abstract

The invention provides a method for preparing a black phosphorus two-dimensional material based on a plasma immersion implantation technology. Hydrogen plasma generated by a plasma immersion implantation system is used for etching a black phosphorus crystal material to obtain a black phosphorus two-dimensional material with the controllable layer number; and then acetylene plasma is used for carrying out deposition / doping processing on the black phosphorus two-dimensional material, thereby improving the stability of the black phosphorus two-dimensional material at a normal temperature in an air environment. With the method provided by the invention, the overall quality of the black phosphorus two-dimensional material is improved; the preparation process is simplified; and an integrated preparation flow from the black phosphorus crystal to the stable black phosphorus two-dimensional material is realized.

Description

technical field [0001] The invention relates to the technical field of molecular materials, in particular to a method for preparing black phosphorus two-dimensional materials based on plasma immersion injection technology. Background technique [0002] As a new type of two-dimensional material, black phosphorus has excellent electron mobility and direct bandgap structure, and the fewer layers, the greater the bandgap energy. It can be widely used in fields such as field effect transistors, photoelectric elements, and solar cells. [0003] At present, the methods for preparing black phosphorus two-dimensional materials in the prior art are mainly mechanical exfoliation method and liquid phase exfoliation method. The two-dimensional materials prepared by these methods are relatively random, poor in uniformity, and the integrity and layer number of the materials cannot be controlled. They need to be centrifuged or screened according to requirements before they can be used, whic...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/383H01L29/24
Inventor 江敏李婉喻学锋
Owner SHENZHEN INST OF ADVANCED TECH
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