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CMP (Chemical Mechanical Planarization) model parameter optimization method and device

A technology of model parameters and optimization methods, applied in electrical digital data processing, special data processing applications, instruments, etc., can solve the problem of low accuracy of model parameters, and achieve the effect of improving accuracy

Inactive Publication Date: 2018-01-26
INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] At present, most of the model parameters of the CMP model can be found in existing literature databases, and the accuracy of the model parameters is low

Method used

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  • CMP (Chemical Mechanical Planarization) model parameter optimization method and device
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  • CMP (Chemical Mechanical Planarization) model parameter optimization method and device

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Embodiment Construction

[0040] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0041] see figure 1 It shows a schematic flow chart of the present invention implementing a disclosed CMP model parameter optimization method

[0042] Depend on figure 1 It can be seen that the present invention includes:

[0043] S101: Establish a CMP model, and determine parameters to be optimized of the CMP model.

[0044] So far, CMP modeling mainly includes the analysis of the contact mechanism between the wafer-particle-polishing pad and the physical ...

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Abstract

The application discloses a CMP (Chemical Mechanical Planarization) model parameter optimization method and device. According to the method, firstly, to-be-optimized parameters of a CMP model are determined; then chip parameters of a planarized chip are predicted on the basis of the CMP model to obtain chip prediction parameters; actually measured parameters corresponding to the chip prediction parameters are acquired; thus an objective function of a PMO optimization algorithm is determined; and the to-be-optimized parameters in the CMP model are optimized on the basis of the objective function according to the PMO optimization algorithm to obtain optimized parameters of the CMP model. Compared with the prior art, the method is based on the prediction parameters and the actually measured parameters of the planarized chip, utilizes the PMO optimization algorithm to optimize the to-be-optimized parameters of the CMP model without the need for searching based on historical data, and increases a precision rate of the model parameters.

Description

technical field [0001] The present application relates to the field of semiconductors, and more specifically, to a method and device for optimizing parameters of a CMP model. Background technique [0002] CMP (Chemical Mechanical Planarization, chemical mechanical polishing) technology, as a key link in the manufacturability design process solution, is currently the only widely used technology that can achieve global planarization in VLSI manufacturing, and has been widely used in integrated circuit chips , micro-mechanical systems and other surface planarization. [0003] A scientific, reasonable, accurate and reliable CMP process model can help process engineers strictly control process conditions, minimize butterfly and erosion after grinding, and make the surface flatness of semiconductor metal gate meet the requirements of lithographic focus depth level. [0004] At present, most of the model parameters of the CMP model can be obtained from existing literature database...

Claims

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Application Information

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IPC IPC(8): G06F17/50
Inventor 徐勤志陈岚
Owner INST OF MICROELECTRONICS CHINESE ACAD OF SCI
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