Silicon epitaxial wafer production process of 8-inch power chip

Abstract

The invention discloses a silicon epitaxial wafer production process of an 8-inch power chip. The process sequentially comprises the following steps of 1, cleaning a silicon substrate material by purewater; then, putting the silicon substrate material into a reactor; 2, using hydrogen gas as current carrying gas to exhaust air in the reactor; 3, raising the temperature inside the reactor to 1160to 1180 DEG C; then, using HCL for etching for 3 to 4min; next, eliminating HCL inside the reactor; 4, lowering the temperature inside the reactor to the growth temperature of 1020 to 1030 DEG C; 5, introducing silane and doping agents into the reactor, so that a silicon monocrystal layer grows on the surface of the silicon substrate to obtain a silicon epitaxial wafer; 6, stopping the introduction of reaction gas into the reactor; when the temperature inside the reactor lowers to the room temperature, introducing the nitrogen gas into the reactor for 3 to 4min; 7, opening the reactor to takeout the silicon epitaxial wafer. The silicon epitaxial wafer production process has the advantages that the integral process is simple; the realization is convenient; the cost is low; during the application, the uniformity and consistency of the electrical resistivity of the produced silicon epitaxial wafer can be improved.

Description

technical field [0001] The invention relates to the preparation technology of semiconductor materials, in particular to the silicon epitaxial wafer production technology of 8-inch power chips. Background technique [0002] In recent years, my country's electronic information industry has maintained a sustained and rapid development momentum. As the production capacity and consumption capacity of electronic consumer products continue to increase, and the international semiconductor industry giants transfer their integrated circuit industry to the mainland of my country, my country's integrated circuit industry is booming. With the positioning of emerging industries in the national strategy, the development of electric vehicles, 3G base station construction, wind power and other industries will further promote the rapid development of domestic integrated circuits. The semiconductor silicon material industry and the semiconductor discrete device industry are important component...

AI Technical Summary

Problems solved by technology

[0006] Resistivity is an important parameter of silicon epitaxial wafers in power chips. When existing silicon single crystal substrates undergo epitaxial growth, due to serious doping phenomena, it is not convenient to control the uniformity and consistency of silicon epitaxial wafer resistivity. It has affected the promotion and application of silicon epitaxial wafers

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