Silicon Epitaxial Wafer Manufacturing Technology for Insulated Gate Bipolar Transistor

Abstract

The invention discloses a production technology of a silicon epitaxy wafer of an insulated gate bipolar transistor. The production technology of a silicon epitaxy wafer of an insulated gate bipolar transistor includes the following steps: 1) cleaning the silicon substrate material by means of pure water, and then putting the silicon substrate material in a reactor; 2) taking hydrogen as current carrying gas to discharge the air in the reactor; 3) heating the internal of the reactor to 1160-1180 DEG C, and then using HCL to etch for 3-4 min, and then eliminating the HCL in the reactor; 4) reducing the temperature in the reactor to the 1130-1140 DEG C growth temperature; 5) filling the reactor with the reaction gas which is formed by mixing of hydrogen and silicon tetrachloride gas so as toenable the surface of the silicon substrate to generate a silicon single-crystal layer to obtain a silicon epitaxy wafer; 6) stopping filling the reactor with the reaction gas, filling the reactor with nitrogen for 3-4 min when the internal temperature of the reactor is reduced to the room temperature; and 7) opening the reactor and taking out the silicon epitaxy wafer. The production technology of a silicon epitaxy wafer of an insulated gate bipolar transistor has the advantages of being simple in the overall technology, being convenient for implementation, being low in cost, and being able to reduce the width of the transition region of the N+ / P+ interface during the application process.

Description

technical field [0001] The invention relates to the preparation technology of semiconductor materials, in particular to the silicon epitaxial wafer production technology of insulated gate bipolar transistors. Background technique [0002] In recent years, with the continuous development of consumer electronics products, more and more devices are applied to insulated gate bipolar transistors (IGBTs). The main structure of the insulated gate bipolar transistor is N - / N + / P + The heterogeneous structure of which, P + is the substrate part, N - / N + For the epitaxial growth part. When epitaxial growth is carried out on a heavily doped substrate, the uniformity and controllability of the longitudinal and radial distribution of resistivity become poor. The main reason is the self-doping phenomenon, which makes the resistivity of the epitaxial layer deviate from the target parameter, N + / P + A wide slowly changing impurity transition zone is formed at the interface, and...

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Problems solved by technology

The main reason is the self-doping phenomenon, which makes the resistivity of the epitaxial layer deviate from the target parameter, N + / P + A wide slowly changing impurity transition zone is formed at the interface, and the wide width of the transition zone will cause the buried layer pattern to drift and the P-N junction to move to the epitaxial layer. In severe cases, even an inversion interlayer will be formed, causing the device to deviate from the characteristics and reduce the reliability.

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