A power chip packaging method and structure
A technology of power chip and packaging method, applied in the direction of semiconductor/solid-state device parts, semiconductor devices, electrical components, etc., can solve problems such as assembly errors of IGBT devices, meet the requirements of ensuring error accuracy, simplify assembly processes, and improve heat dissipation capacity Effect
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Embodiment 1
[0036] This embodiment provides a power chip packaging method, which is suitable for packaging power chips (such as IGBT chips), such as figure 1 As shown, the method includes the following steps:
[0037] S11: Connect the first metal pad 50, the power chip 30 and the second metal pad 10 to form a connection sub-module; Figure 2A and 2BAs shown, that is, before the plastic packaging, the first metal pad 50, the power chip 30 and the second metal pad 10 are first connected to form a connection sub-module (the connection sequence can be adjusted according to actual needs), so that after the plastic packaging In this case, it is only necessary to assemble and connect the sub-module as a whole, because the relative positions of the components of the connected sub-module have been fixed, thus avoiding the error caused by the assembly of a single part during the assembly process, and simplifying the assembly process .
[0038] S12: Plastic sealing the formed connection sub-modul...
Embodiment 2
[0056] This embodiment provides a power chip packaging structure, such as image 3 As shown, it includes: a first cover plate 3, and a boss is arranged on the first cover plate 3; a power chip sub-module 1, including a plastic package case 70 and a connection sub-module set in the plastic package case 70, wherein the connection sub-module The set includes a first metal pad 50, a power chip 30 and a second metal pad 10 sintered together, and a first sintered layer 40 is arranged between the first metal pad 50 and the power chip 30, and the power chip 30 The second sintering layer 20 is arranged between the second metal gasket 10, which are respectively used to sinter the three together in a vacuum sintering furnace through auxiliary tools with controllable temperature, pressure and thickness. The power chip sub-module 1 is set On the boss of the first cover 3 ; the second cover 2 , the second cover 2 is arranged on the power chip sub-module 1 . Compared with the prior art, the...
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