Crystal pulling production process of single crystal furnace, and method for obtaining limited vacuum value of single crystal furnace

A technology of ultimate vacuum and production process, applied in the direction of single crystal growth, single crystal growth, crystal growth, etc., can solve the problems of low efficiency, long time-consuming sealing detection steps, high production cost, etc., to achieve easy operation and save conventional leak detection labor Step and argon flow step, the effect of improving production efficiency

Active Publication Date: 2018-03-06
INNER MONGOLIA ZHONGHUAN SOLAR MATERIAL
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Problems solved by technology

Therefore, in the conventional production process, the seal detection step before pressure is time-consuming, low in efficiency, and high in production cost

Method used

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  • Crystal pulling production process of single crystal furnace, and method for obtaining limited vacuum value of single crystal furnace
  • Crystal pulling production process of single crystal furnace, and method for obtaining limited vacuum value of single crystal furnace
  • Crystal pulling production process of single crystal furnace, and method for obtaining limited vacuum value of single crystal furnace

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Embodiment Construction

[0029] It should be noted that, in the case of no conflict, the embodiments of the present invention and the features in the embodiments can be combined with each other.

[0030] In describing the present invention, it should be understood that the terms "center", "longitudinal", "transverse", "upper", "lower", "front", "rear", "left", "right", " The orientations or positional relationships indicated by "vertical", "horizontal", "top", "bottom", "inner" and "outer" are based on the orientations or positional relationships shown in the drawings, and are only for the convenience of describing the present invention and Simplified descriptions, rather than indicating or implying that the device or element referred to must have a particular orientation, be constructed and operate in a particular orientation, and thus should not be construed as limiting the invention. In addition, the terms "first", "second", etc. are used for descriptive purposes only, and should not be understood ...

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Abstract

The invention provides a crystal pulling production process of a single crystal furnace. The crystal pulling production process of the single crystal furnace comprises the following steps: 1) measuring the limit vacuum value when the single crystal furnace is vacuumized for m minutes (m is less than n, and n is the conventional single crystal furnace crystal pulling production vacuumizing time); and 2) after the single crystal furnace is charged and closed, vacuumizing for m minutes, detecting the vacuum value in the furnace, judging that sealing of the furnace body is qualified if the detection value is less than or equal to the limit vacuum value and continuing production, and judging that sealing of the furnace body is unqualified if the detection value is more than the limit vacuum value, performing leakage measurement and maintenance on the furnace body until the sealing of the furnace body is qualified and performing subsequent production. According to the crystal pulling production process of the single crystal furnace, the vacuum degree value is compared with the limit vacuum value after the furnace is closed, so that the sealing property of the furnace body is judged, operation is facilitated, the process route is optimized, the crystal pulling time is saved, the production efficiency is improved and great economic benefit is brought to production.

Description

technical field [0001] The invention belongs to the field of crystal pulling production in a single crystal furnace, and in particular relates to a crystal pulling production process in a single crystal furnace and a method for obtaining the ultimate vacuum value of the single crystal furnace. Background technique [0002] like image 3 As shown, in the crystal pulling production of single crystal furnace, in the process of preparing single crystal silicon by Czochralski method, judging whether the sealing performance of single crystal furnace meets the requirements of crystal pulling is an essential step in the crystal pulling process. Furnace tightness does not meet the requirements, it is easy to cause oxidation in the furnace, affecting the crystallization of single crystal. [0003] The conventional process of judging the tightness is to use a vacuum pump to pump the pressure in the single crystal furnace to the limit vacuum state (the limit vacuum value is 0-20mtorr), ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B15/20C30B29/06
CPCC30B15/20C30B29/06
Inventor 霍志强马国瑞郭谦许建陈培杰吴若林梁山贾海洋谷守伟杨瑞峰
Owner INNER MONGOLIA ZHONGHUAN SOLAR MATERIAL
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