Semiconductor device and manufacturing method thereof

A semiconductor and buffer layer technology, applied in the field of semiconductor devices and their manufacturing, can solve problems such as reducing the full well electron capacity of an image sensor, and achieve the effects of improving image quality, improving quantum efficiency, and reducing crosstalk

Active Publication Date: 2018-03-06
HUAIAN IMAGING DEVICE MFGR CORP
View PDF4 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In order to prevent the occurrence of dark current, ion implantation is used on each surface of silicon to form surface radiation, thereby preventing el

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Semiconductor device and manufacturing method thereof
  • Semiconductor device and manufacturing method thereof
  • Semiconductor device and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0045] Various exemplary embodiments of the present disclosure will now be described in detail with reference to the accompanying drawings. It should be noted that unless specifically stated otherwise, the relative arrangement of components and steps, numerical expressions and numerical values ​​set forth in these embodiments do not limit the scope of the present disclosure. In addition, the technologies, methods, and equipment known to those of ordinary skill in the relevant fields may not be discussed in detail, but where appropriate, the technologies, methods, and equipment should be regarded as part of the authorization specification.

[0046] In the specification and claims, the words "front", "rear", "top", "bottom", "above", "below", etc., if they exist, are used for descriptive purposes and are not necessarily used To describe the same relative position. It should be understood that the words used in this way are interchangeable under appropriate circumstances so that th...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a semiconductor device and a manufacturing method thereof. The semiconductor device includes a substrate, a buffer layer, and a radiation adjustment layer. The substrate includes trenches and transmission regions separated by the trenches. The buffer layer is formed on the substrate, and covers the surfaces of the trenches and the transmission regions. The radiation adjustment layer is formed on the buffer layer, and includes a first portion on the buffer layer in the trenches and a second portion on the buffer layer on the transmission regions, wherein the first portion is formed from a radiation reflection material or a radiation absorption material, and the second portion is formed from a radiation transmission material.

Description

technical field [0001] The present disclosure relates to the field of semiconductors, and in particular, to semiconductor devices and methods of manufacturing the same. Background technique [0002] Image sensors may be used to sense radiation (eg, optical radiation, including but not limited to visible light, infrared, ultraviolet, etc.) to generate corresponding electrical signals (images). It is widely used in digital cameras, security devices, and other imaging equipment. Image sensors can be classified into back-illuminated (BSI) image sensors and front-illuminated (FSI) image sensors according to the way they receive radiation. [0003] A backside illuminated (BSI) image sensor is capable of receiving radiation from its backside. Different from front-illuminated (FSI) image sensors, in back-illuminated (BSI) image sensors, radiation is incident from the back of the substrate, while wiring and other components that may affect radiation reception are basically located ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L27/146
CPCH01L27/14623H01L27/1463H01L27/1464H01L27/14685
Inventor 陈世杰黄晓橹
Owner HUAIAN IMAGING DEVICE MFGR CORP
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap