Frequency multiplier and its preparation method
A frequency multiplier and oxide semiconductor technology, applied in the field of frequency multiplier and its preparation, can solve problems such as complex process, difficulty in large-area preparation, difficulty in ensuring good performance, etc., and achieve simple process, easy materials, and meet industrial needs Effect
Active Publication Date: 2020-12-01
THE NAT CENT FOR NANOSCI & TECH NCNST OF CHINA
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Problems solved by technology
[0005] The present invention provides a frequency multiplier and a preparation method thereof, to overcome the complex process, large The difficulty of area preparation and the difficulty of ensuring good performance cannot meet the industrial needs of frequency doublers
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[0021] The specific implementation manners of the present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. The following examples are used to illustrate the present invention, but are not intended to limit the scope of the present invention.
[0022] Such as figure 1 As shown, according to the first aspect of the present invention, a method for preparing a frequency doubler is provided, the method comprising: step 1, preparing an oxide semiconductor layer on the surface of the dielectric layer on the gate conductive layer, and preparing the oxide semiconductor layer The semiconductor layer is annealed; Step 2, vapor-depositing an organic small molecule layer on the surface of the oxide semiconductor layer; Step 3, vapor-depositing a drain electrode and a source electrode on the surface of the organic small molecule layer to obtain a bipolar field effect transistor As a frequency multiplier; the frequency multip...
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Abstract
The invention provides a frequency multiplier and a preparation method thereof. The method includes: step 1, preparing an oxide semiconductor layer on the surface of the dielectric layer on the gate conductive layer, and performing annealing treatment on the oxide semiconductor layer; step 2, evaporating an organic oxide semiconductor layer on the surface of the oxide semiconductor layer small molecule layer; step 3, evaporating drain and source electrodes on the surface of the organic small molecule layer to obtain a bipolar field effect transistor as a frequency doubler; the frequency doubler uses the organic small molecule layer as a P-type active layer, using the oxide semiconductor layer as the N-type active layer. In the present invention, organic small molecules and oxide semiconductors with matched electrical properties form bipolar field effect transistors as frequency multipliers, so that the frequency multipliers have good performance and output signal energy purity is higher. In addition, the materials used in the present invention are easy to obtain, so the frequency doubler can be mass-produced to meet the industrial demand for the frequency doubler.
Description
technical field [0001] The invention relates to the technical field of electronic device preparation, and more specifically, to a frequency multiplier and a preparation method thereof. Background technique [0002] A frequency multiplier is a circuit used to increase frequency and is widely used in radio frequency systems such as communications, radar, and terahertz imaging. Under the excitation of the sine wave signal, the frequency multiplier uses the nonlinear characteristics of the nonlinear device to make the nonlinear device generate power at the harmonic frequency, select the required harmonic component, suppress the unnecessary harmonic component, and make the output The frequency is an integer multiple of the input frequency. [0003] Typical frequency doublers are rectifier circuits based on nonlinear diodes. Due to the fact that the output voltage and current curve of the nonlinear diode cannot completely produce a symmetrical I-V curve at the minimum conductanc...
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IPC IPC(8): H01L51/40H01L51/05H01L51/30
CPCH10K71/16H10K71/40H10K85/6576H10K10/46H10K2102/00
Inventor 江潮李默林王嘉玮
Owner THE NAT CENT FOR NANOSCI & TECH NCNST OF CHINA