Control signal generation circuit for multiple voltage domains

Abstract

The invention discloses a control signal generation circuit for multiple voltage domains. The control signal generation circuit comprises a MOS field-effect transistor M1, a MOS field-effect transistor M2 and a comparator, wherein sources of the two MOS field-effect transistors and the gate of the MOS field-effect transistor M2 are jointly connected and grounded, the gate of the MOS field-effect transistor M1 accesses a control enable signal EN, drains of the two MOS field-effect transistors are connected with a main body power domain VEE respectively, a branch of the drain of the MOS field-effect transistor M1 is connected to a negative pole input end of the comparator, a branch of the drain of the MOS field-effect transistor M2 is connected to a positive pole input end of the comparator,and the output end of the comparator serves as output of the control signal generation circuit. With implementation of the control signal generation circuit for the multiple voltage domains, influence of technological parameters can be offset, electric leakage is avoided, voltage is withstood highly, and high-precision controllable threshold voltage can be obtained.

Description

technical field [0001] The invention relates to a signal generation circuit, in particular to a generation circuit which can be used for multi-voltage domain control signals. Background technique [0002] With the development of science and technology, signal interconnection control has been widely used in the function realization of various electrical equipment. In these system architectures, the main system (including power supply) is usually in a negative voltage domain, such as the power supply VEE is -12V; but the control enable signal EN in the control system is positive voltage (0-3.3V), and a special circuit needs to be designed To generate high-precision control signals. [0003] However, the existing circuits of this type often have drawbacks, and cannot effectively meet the needs of control signal generation. Such as figure 1 In the generation circuit shown, there is only one MOS transistor M1, its source is connected to the control enable signal EN, its gate i...

AI Technical Summary

Problems solved by technology

However, the control signal generation circuit is greatly affected by the process parameters of the two MOS tubes, and cannot be applied to high-precision control

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