Display device and manufacturing method thereof
A technology for displaying devices and patterns, which is applied to optics, instruments, electrical components, etc., and can solve problems such as increasing process cycle time
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experiment example
[0064] Figures 7 to 11 is a diagram for describing a sub-pixel structure and repair process according to an experimental example. Figure 9 yes Figure 8 A cross-sectional view of the A1-A2 area, Figure 10 yes Figure 8 Cross-sectional view of the B1-B2 area before the restoration process, Figure 11 yes Figure 8 Cross-sectional view of the B1-B2 region after the repair process.
[0065] Such as Figure 7 As shown in , the anode E1 is located in the circuit area DRA and the light emitting area EMA of the sub-pixel. The anode E1 has a neck between the circuit area DRA and the light emitting area EMA. The neck has a narrower width than the circuit area DRA and the light emitting area EMA.
[0066] Such as Figure 8 with 9 As shown in , the buffer layer BUF is formed on the substrate SUB. The light shielding layer LSM is formed on the buffer layer BUF. The light shielding layer LSM is patterned not to hinder emission of light generated from the light emitting area ...
no. 1 approach
[0082] Figures 12 to 16 is a diagram for describing the sub-pixel structure and repair process according to the first embodiment. Figure 13 yes Figure 12 A cross-sectional view of the A1-A2 area, Figure 14 yes Figure 12 Cross-sectional view of the B1-B2 area before the restoration process, Figure 15 yes Figure 12 Cross-sectional view of the B1-B2 area after the repair process, Figure 16 yes Figure 12 Cross-sectional view of the C1-C2 region after the repair process.
[0083] Such as Figure 12 As shown in , the anode E1 is located in the circuit area DRA and the light emitting area EMA of the sub-pixel. The anode E1 has a neck between the circuit area DRA and the light emitting area EMA. The neck has a narrower width than the circuit area DRA and the light emitting area EMA.
[0084] Such as Figure 12 with 13 As shown in , the buffer layer BUF is formed on the substrate SUB. The light shielding layer LSM is formed on the buffer layer BUF. The light shie...
no. 2 approach
[0107] Figure 17 is a plan view illustrating a concave pattern applied to a repair process according to a second embodiment of the present invention, Figure 18 is a plan view illustrating a depression pattern applied to a repair process according to a third embodiment of the present invention.
[0108] Such as Figure 17 As shown in , the recessed pattern HA corresponds to the neck setting. The neck is elongated vertically. The depression pattern HA is arranged to have a width corresponding to the horizontal length of the neck and a vertical length smaller than the vertical length of the neck in consideration of other electrodes or signal lines that may be disposed close to the neck.
[0109] Such as Figure 18 As shown in , the recessed pattern HA corresponds to the neck setting. The neck is elongated vertically. Considering the design of forming the depressed area to correspond to the area irradiated with the laser light, the depressed pattern HA is arranged to have ...
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