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Surface treatment method for growing graphene based on sapphire substrate

A surface treatment, sapphire technology, applied in the direction of graphene, nano-carbon, etc., can solve problems such as high cost, and achieve the effect of avoiding damage and simplifying complexity

Inactive Publication Date: 2018-03-16
NANCHANG HANGKONG UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Among them, the cost of epitaxial technology is relatively expensive due to the requirements on the quality and size of the substrate.

Method used

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  • Surface treatment method for growing graphene based on sapphire substrate
  • Surface treatment method for growing graphene based on sapphire substrate
  • Surface treatment method for growing graphene based on sapphire substrate

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Experimental program
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Effect test

Embodiment 1

[0030] Embodiment 1: a concrete implementation step of the present invention is as follows:

[0031] 1) Put the sapphire substrate into acetone, absolute ethanol and deionized water in sequence for ultrasonic cleaning for 15 minutes, then take out the substrate and dry it with 99.999% high-purity argon;

[0032] 2) Put the treated sapphire substrate into the central area of ​​the quartz reaction chamber 1, turn on the vacuum pumping device 5, pump the vacuum to 10Pa, then pass in argon gas to normal pressure, continue to vacuum to 10Pa, and repeat three times to remove the quartz the air in reaction chamber 1;

[0033] 3) Introduce hydrogen gas into the quartz reaction chamber 1 to etch the substrate surface, the gas flow rate is 30sccm, adjust the angle of the ball valve to keep the pressure in the tube at 100Pa, the etching temperature is 1100°C, and the etching time is 3h;

[0034] 4) After the etching is completed, wait for it to cool down to room temperature, respectivel...

Embodiment 2

[0041] Embodiment 2: another concrete implementation step of the present invention is as follows:

[0042] 1) Put the sapphire substrate into acetone, absolute ethanol and deionized water in sequence for ultrasonic cleaning for 20 minutes, then take out the substrate and dry it with 99.999% high-purity argon;

[0043] 2) Put the treated sapphire substrate into the central area of ​​the quartz reaction chamber 1, turn on the vacuum pumping device 5, pump the vacuum to 10Pa, then pass in argon gas to normal pressure, continue to vacuum to 10Pa, and repeat three times to remove the quartz the air in reaction chamber 1;

[0044] 3) Introduce hydrogen gas into the quartz reaction chamber 1 to etch the substrate surface, the gas flow rate is 40 sccm, adjust the angle of the ball valve to keep the pressure in the tube at 100 Pa, the etching temperature is 1100 ° C, and the etching time is 2 hours;

[0045] 4) After the etching is completed, wait for it to cool down to room temperature...

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Abstract

The invention discloses a surface treatment method for growing graphene based on a sapphire substrate. The method adopts a high-temperature gas etching manner to etch the surface of the substrate, andthen pressure, flow and temperature parameters are regulated, so that the graphene is directly grown on the surface of sapphire. According to the invention, the sapphire is used as the substrate, anda chemical vapor deposition method is adopted to directly grow the graphene on the sapphire substrate, so that the graphene is prevented from being destructed to different extents in the transferringprocess, and operation complexity is greatly simplified.

Description

technical field [0001] The invention belongs to graphene preparation technology, in particular to a surface treatment method for growing graphene based on a sapphire substrate. Background technique [0002] Graphene - a two-dimensional crystal composed of carbon atoms arranged in a regular hexagonal hybrid orbital, has unique electrical properties and extraordinary optical properties. The experimentally measured conductance shows that holes and electrons have high and roughly equal mobility, and single-layer graphene absorbs only 2.3% of visible light. This also indicates that graphene will play a vital role in the future development of nanoelectronics and optoelectronics. The traditional method to obtain graphene by micro-mechanical exfoliation essentially limits the size of graphene to micron level, which is not suitable for most industrial applications. So far, techniques that can be used to prepare large-area graphene include epitaxial growth and chemical vapor deposit...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B32/186
Inventor 李多生洪跃叶寅江五贵邹伟李锦锦林奎鑫
Owner NANCHANG HANGKONG UNIVERSITY