A kind of preparation method of flexible oled display panel and flexible oled display panel

Abstract

The invention provides a method for preparing a flexible OLED display panel, comprising providing a hard substrate, preparing a flexible base layer on the hard substrate, sequentially preparing a buffer layer, a semiconductor layer, and a first gate insulating layer on the flexible base layer, and Perform channel doping, prepare the first gate on the first gate insulating layer, and perform source and drain doping; after activation treatment, prepare the second gate insulating layer on the first gate; after hydrogenation treatment, On the second gate insulating layer, the second gate, organic inter-insulating layer, source-drain, flat layer and OLED structure are sequentially prepared, and finally the hard substrate is separated from the flexible base layer by laser lift-off process to obtain a flexible OLED display panel. In the preparation process of the flexible OLED display panel of the present invention, the activation and hydrogenation processes are advanced, the preparation of the inorganic inter-insulation layer in the inter-insulation layer is omitted, the thickness of the flexible OLED display panel is reduced, and the production process is shortened.

Description

technical field [0001] The invention relates to the technical field of display panels, in particular to a method for preparing a flexible OLED display panel and the flexible OLED display panel. Background technique [0002] Organic light-emitting diodes (Organic Light-Emitting Diode, OLED) are more and more widely used due to their excellent display performance, such as self-illumination, wide viewing angle, low power consumption, fast response speed, and flexible display. Used in display panels of electronic products such as mobile phones, TVs, and computers. [0003] Existing OLED display panels include OLED devices and thin film transistor (Thin Film Transistor, TFT) array substrates, which require channel doping and source-drain doping during the preparation process, which will cause polysilicon damage and require activation It is repaired, and there are dangling bonds in unbonded orbitals at the interface between the polysilicon layer and the gate oxide layer, resultin...

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Problems solved by technology

[0003] Existing OLED display panels include OLED devices and thin film transistor (Thin Film Transistor, TFT) array substrates, which require channel doping and source-drain doping during the preparation process, which will cause polysilicon damage and require activation Repair it, and there are dangling bonds in unbonded orbitals at the interface between the polysilicon layer and the gate oxide layer, resulting in an increase in the interface density of the polysilicon layer, and the hydrogenation process is required to passivate the defects inside and at the interface of the polysilicon layer

At present, the activation methods include high-temperature furnace annealing, laser activation, etc., all of which need to be activated at a higher temperature. Since the inter-insulation layer includes an inorganic inter-insulation layer and an organic inter-insulation layer, its thickness is relatively large, and it is easy to Spalling at high temperatures due to excessive stress due to thermal expansion

The hydrogenation process needs to enter the polysilicon layer through the multi-layer film, so that the hydrogen diffusion distance is very long. At the same time, in order to be able to fully hydrogenate, it needs a long time of heating, which will also cause cracks in the inter-insulation layer, which increases energy consumption and OLED display panel. Cost of production

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