Preparation device and preparation method of double-carbon source synthesized artificial diamond
A technology for artificial diamonds and preparation devices, which is applied in chemical instruments and methods, methods for chemically changing substances by using atmospheric pressure, and ultra-high pressure processes, etc., which can solve the problems of expensive seed crystals and inability to apply large-scale production, etc. problem, to achieve the effect of increasing the width/height ratio and increasing the growth rate
Pending Publication Date: 2018-03-23
王国伟
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Abstract
The invention relates to a preparation device and method for synthesizing artificial diamond with dual carbon sources. The preparation device includes a pressure transmission medium cube, a graphite heating tube and a synthesis chamber. The MgO crystal bed of the synthesis chamber has accommodating For the seed crystal groove, several blind holes are also arranged on the MgO crystal bed. The preparation method includes filling diamond micropowder in blind holes as a second carbon source and graphite carbon source to synthesize artificial diamond. The present invention can significantly increase the growth rate of diamond single crystals in the first 48 hours when multiple synthetic diamond single crystals are grown by the high temperature-high pressure temperature gradient method by using graphite-diamond micropowder dual carbon sources, so that the average growth rate of single crystals can reach 10mg/ hr; single crystal clarity can reach VVS level.
Application Domain
Ultra-high pressure processes
Technology Topic
SatelliteCarbon source +11
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PUM
Property | Measurement | Unit |
Diameter | 0.5 ~ 1.0 | mm |
Hole depth | 1.0 ~ 2.0 | mm |
Diameter | 1.0 | mm |
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