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Preparation method and memory of a new type of 3D spin-transfer torque MRAM memory

A spin transfer torque and memory technology, applied in the field of memory, 3DMRAM memory preparation, can solve the problems of limited storage capacity and MRAM plane layout, and achieve the effect of improving the storage density of cells

Active Publication Date: 2018-12-14
YANGTZE MEMORY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Therefore, the MRAM using the above structure is limited by the plane layout, and the storage capacity is limited

Method used

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  • Preparation method and memory of a new type of 3D spin-transfer torque MRAM memory
  • Preparation method and memory of a new type of 3D spin-transfer torque MRAM memory
  • Preparation method and memory of a new type of 3D spin-transfer torque MRAM memory

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Embodiment Construction

[0022] Exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. Although exemplary embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure may be embodied in various forms and should not be limited by the embodiments set forth herein. Rather, these embodiments are provided for more thorough understanding of the present disclosure and to fully convey the scope of the present disclosure to those skilled in the art.

[0023] In the interest of clarity, not all features of an actual implementation are described. In the following description, well-known functions and constructions are not described in detail since they would obscure the invention with unnecessary detail. It should be appreciated that in the development of any actual embodiment, numerous implementation details must be worked out to achieve the developer's specific goals, such as ch...

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Abstract

The invention provides a preparation method of a novel 3D spin transfer torque MRAM (magnetic random access memory) and the memory. The preparation method comprises the following steps: constructing aSTT-MTJ (spin transfer torque magnetic tunnel junction) in a vertical direction. The specific construction method comprises the following steps: providing a thin film stacking structure in which silicon oxide thin films and magnetic thin films are spaced; performing etching longitudinally on the thin film stacking structure to form a narrow channel penetrating the thin film stack structure; filling the narrow channel with an alumina dielectric layer; etching back alumina to remove alumina films except the alumina film in the narrow channel; forming electrodes, specifically, forming the electrodes outside the thin film stack structure; etching back the electrodes, in particular, removing the electrodes at the upper part of the thin film stack structure while the electrodes on the side surfaces are retained. With adoption of the method, STT-MTJ can be constructed in the vertical direction, and accordingly, the cell storage density can be significantly increased, and a 3D MRAM can replace a 3D NAND.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for preparing a 3D MRAM memory and the memory. Background technique [0002] With the development of planar flash memory, the production process of semiconductors has made great progress. However, in recent years, the development of planar flash memory has encountered various challenges: physical limits, existing development technology limits, and storage electron density limits. In this context, in order to solve the difficulties encountered in planar flash memory and to seek lower production costs per unit storage unit, various three-dimensional (3D) flash memory structures have emerged as the times require. In nonvolatile (nonvolatile) storage technology In the field, 3D NOR (3D or not) flash memory and 3D NAND (3D and not) flash memory are the most common forms of memory. At the same time, other types of non-volatile memory are also developing rapidly, su...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G11C11/16
CPCG11C11/16G11C11/161
Inventor 方振徐二江
Owner YANGTZE MEMORY TECH CO LTD