Top-gate thin film transistor and its preparation method, array substrate, display panel
A thin-film transistor and top-gate technology, which is applied in transistors, semiconductor/solid-state device manufacturing, semiconductor devices, etc., can solve problems such as gate insulating layer thinning, short circuit, and affecting process stability, so as to prevent excessive thinning and ensure Electrical properties and the effect of improving surface damage
Inactive Publication Date: 2020-06-19
BOE TECH GRP CO LTD
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Problems solved by technology
In the LTPS process, there will be a process step of etching the gate insulating layer. This step needs to clean the gate insulating layer with hydrofluoric acid (HF), but the cleaning process will inevitably have a certain impact on the gate insulating layer, such as Thinning of the gate insulating layer, and even the risk of short circuit at the climbing point, etc., thus affecting the stability of the subsequent process and the electrical characteristics of TFT (Thin Film Transistor, thin film transistor)
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[0042] Example embodiments will now be described more fully with reference to the accompanying drawings. Example embodiments may, however, be embodied in many forms and should not be construed as limited to the examples set forth herein; rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the concept of example embodiments to those skilled in the art. The described features, structures, or characteristics may be combined in any suitable manner in one or more embodiments. In the following description, numerous specific details are provided in order to give a thorough understanding of embodiments of the present disclosure. However, those skilled in the art will appreciate that the technical solutions of the present disclosure may be practiced without one or more of the specific details being omitted, or other methods, components, devices, steps, etc. may be adopted. In other instances, well-known technical solutio...
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The invention provides a top gate type film transistor and a manufacturing method thereof, an array substrate and a display panel and relates to the display technology field. The method comprises steps that a second gate insulation layer is prepared on a substrate on which a semiconductor active layer, a source, a drain, a first gate insulation layer and a first gate are formed, and an etching protection layer is formed over the second gate insulation layer; the substrate on which the second gate insulation layer and the etching protection layer are formed is placed in a hydrofluoric acid cleaning device for oxidation treatment and hydrofluoric acid cleaning to remove the etching protection layer in the hydrofluoric acid cleaning process; a second gate is prepared on the substrate after hydrofluoric acid cleaning. The method is advantaged in that surface damage to the gate insulation layers caused by hydrofluoric acid cleaning can be ameliorated, and electrical performance of the filmtransistor and subsequent process stability are guaranteed.
Description
technical field [0001] The present disclosure relates to the field of display technology, in particular to a top-gate thin film transistor and a manufacturing method thereof, an array substrate, and a display panel. Background technique [0002] With the rapid development of semiconductor technology, LTPS (Low Temperature Poly-silicon, low-temperature polysilicon) backplane technology has the advantages of high mobility, high aperture ratio, and the realization of GOA (Gate Driver on Array, array substrate row drive), making Compared with the display panel based on a-Si (amorphous silicon) technology, the display panel based on the LTPS technology has a better display effect, and thus has received more and more attention. [0003] Nowadays, people have higher and higher requirements for display resolution, and high PPI (Pixels Per Inch, pixels per inch) display is a great challenge to the existing LTPS process. In the LTPS process, there will be a process step of etching th...
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IPC IPC(8): H01L29/786H01L21/28H01L21/336H01L21/34
CPCH01L21/28158H01L29/66757H01L29/66969H01L29/78675H01L29/7869
Inventor 班圣光曹占锋姚琪
Owner BOE TECH GRP CO LTD