Etching solution for glass substrate thinning technology
A glass substrate and etching solution technology, applied in the field of glass substrate thinning production, can solve the problems of high volatility, high toxicity of hydrofluoric acid, high risk, reduce toxicity, improve etching rate and etching effect, and be easily dissolved by water Effect
Inactive Publication Date: 2018-04-13
天津美泰真空技术有限公司
View PDF3 Cites 5 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
At present, the thinning etchant substrates used all use hydrofluoric acid as the main component, but hydrofluoric acid is highly toxic and volatile, especially when it needs to be prepared at a higher temperature and concentration, not only the production process High risk, and will cause huge pollution to the environment
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment 1
[0020] A glass substrate thinning process etchant, which is prepared from raw materials including the weight percentages shown in Table 1:
[0021] The formula of the etching solution of table 1 embodiment 1
[0022]
[0023]
Embodiment 2
[0025] A glass substrate thinning process etching solution, which is prepared from raw materials including the weight percentages shown in Table 2:
[0026] The formula of the etching solution of table 2 embodiment 2
[0027]
Embodiment 3
[0029] A glass substrate thinning process etching solution, the etching solution is prepared from raw materials including the weight percentages shown in Table 3:
[0030] The formula of the etching solution of table 3 embodiment 3
[0031]
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more PUM
Login to view more Abstract
The invention provides an etching solution for a glass substrate thinning technology. The etching solution is prepared from the following raw materials in percentage by weight: 1 to 5 percent of HF (Hydrogen Fluoride), 10 to 25 percent of fluoride, 5 to 10 percent of strong acid, 1 to 5 percent of ethylenediamine tetraacetic acid (EDTA) or ethylenediamine tetraacetic acid salt (EDTA salt), 1 to 2percent of a surfactant, 1 to 2 percent of ethanol and the balance of water. According to the etching solution for the glass substrate thinning technology, a formula is optimized and the dosage of hydrofluoric acid is reduced; meanwhile, certain beneficial auxiliary agents are added, so that negative problems caused by the HF are avoided and an etching effect is good.
Description
technical field [0001] The invention relates to the technical field of glass substrate thinning production, in particular to an etchant for glass substrate thinning process. Background technique [0002] In the field of flat panel display, including plasma display, touch screen, liquid crystal display and other manufacturing processes, in order to further reduce the weight of display devices, more and more manufacturers adopt the method of thinning the glass substrate. There are usually two methods for glass substrate thinning, one is physical polishing and grinding, and the other is chemical etching thinning, among which chemical etching thinning is the most widely used. At present, the thinning etchant substrates used all use hydrofluoric acid as the main component, but hydrofluoric acid is highly toxic and volatile, especially when it needs to be prepared at a higher temperature and concentration, not only the production process The risk is high, and it will cause huge p...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more Application Information
Patent Timeline
Login to view more Patent Type & Authority Applications(China)
IPC IPC(8): C03C15/00
CPCC03C15/00
Inventor 张杰沈励郑建军姚仕军夏伟吴青肖
Owner 天津美泰真空技术有限公司
Who we serve
- R&D Engineer
- R&D Manager
- IP Professional
Why Eureka
- Industry Leading Data Capabilities
- Powerful AI technology
- Patent DNA Extraction
Social media
Try Eureka
Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.
© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap