Sintering method for preparing porous thin films

A sintering method and porous film technology, which is applied in the field of sintering to prepare porous films, and can solve the problems of easy deformation and deformation of film precursors

Active Publication Date: 2018-04-17
CHENGDU INTERMENT TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Further research found that during the vertical sintering process, because the film precursor is soft and easily deformed, when the number of windings is large, the external film precursor is easily affected by gravity, resulting in deformed sintering defects

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0016] First, carbonyl Ni powder with an average particle size of 3 μm and Cu powder with an average particle size of 6 μm are used as raw material powders, wherein the Cu powder mass accounts for 30% of the total mass of the raw material powder, and then refer to the Chinese invention patent with publication number CN104588651A. A thin film precursor with a thickness of 10 μm was prepared by the method. Nickel oxide foam is used as the support body, and its average pore size is 70 mesh. Lay the film precursor flat, then place it superimposed on one side of the support whose size is slightly larger than the size of the film precursor, and then wind it along the support itself. After the winding is completed, a binding piece with a diameter of 1mm and made of nickel oxide is used for binding and fixing. Then the wound and fixed support body is placed upright in a sintering furnace for sintering. The sintering process is divided into the following three stages, the first stage...

Embodiment 2

[0019] First, carbonyl Ni powder with an average particle size of 3 μm and Cu powder with an average particle size of 6 μm are used as raw material powders, wherein the Cu powder mass accounts for 30% of the total mass of the raw material powder, and then refer to the Chinese invention patent with publication number CN104759629A. A thin film precursor with a thickness of 10 μm was prepared by the method. Spray Al with an average particle size of 5 μm on one side of the two film precursors 2 o 3 , forming a uniformly distributed isolation layer. Nickel oxide foam is used as the support body, and its average pore size is 70 mesh. Lay two sheets of film precursors flat, and then stack them on both sides of the support slightly larger than the size of the film precursor and make the side not sprayed with the isolation layer face the support, and then wind along the support itself. After the winding is completed, use a binding piece with a diameter of 1mm and a material of 304 s...

Embodiment 3

[0022] First, carbonyl Ni powder and copper foil with an average particle size of 3 μm are used as raw materials, wherein the purity of the copper foil is above 99%, and the thickness is 10 μm. thin film precursors. Spray Al with an average particle size of 20 μm on one side of the two film precursors 2 o 3 , forming a uniformly distributed isolation layer. Lay two layers of film precursors flat and stack them so that the sides sprayed with the isolation layer face each other. Nickel oxide foam is used as the support body, and its average pore size is 70 mesh. The stacked film precursors are stacked on one side of the support whose size is slightly larger than that of the film precursor, and then wound along the support itself. After the winding is completed, a binding piece with a diameter of 1 mm and made of nickel oxide is used for binding and fixing, and then the support body is placed upright in a sintering furnace for sintering. The sintering process is divided into...

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Abstract

The invention discloses a sintering method for preparing porous thin films. The porous thin films are obtained through sintering of thin film precursors. The sintering method comprises the following steps that (1) supporting bodies matched with the thin film precursors in size are obtained; and (2) the thin film precursors and the supporting bodies are overlaid, wound and fixed and then placed into a sintering furnace to be sintered, and the porous thin films are obtained after sintering is completed. Owing to the isolating effect of the supporting bodies, the thin film precursors can be woundso as to save the space of the sintering furnace to improve the production efficiency. All layers of the wound thin film precursors bear the fixing supporting effect of the supporting bodies, and thesintering defect that the thin film precursors deform due to the influence of the gravity effect is effectively prevented.

Description

technical field [0001] The invention relates to a sintering method for preparing a porous film. Background technique [0002] The preparation of porous films mainly includes the preparation of mixed materials, the preparation of film precursors and the sintering process. If the film precursor is directly placed or folded into a sintering boat for sintering, due to the high sintering temperature and accompanying chemical reactions, the resulting porous film will usually have a larger deformation than its film precursor; at the same time, The film precursors that are in contact with each other tend to stick together during the sintering process and are difficult to separate. Therefore, the traditional sintering method is difficult to effectively control the size and performance of porous films, and the sintering process must be further improved. The applicant of the present application submitted an application for an invention patent with the publication number CN105215366A,...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B22F3/11B22F5/10
CPCB22F3/11B22F5/10
Inventor 高麟汪涛王韬尹丽李波
Owner CHENGDU INTERMENT TECH
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