Unlock instant, AI-driven research and patent intelligence for your innovation.

Formation method of semiconductor structure

A semiconductor and fin technology, applied in the field of semiconductor structure formation, can solve problems such as uneven thickness of fins, and achieve the effects of uniform size, improved uniformity, and improved performance

Active Publication Date: 2018-04-17
SEMICON MFG INT (SHANGHAI) CORP +1
View PDF6 Cites 8 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the semiconductor structure formed in the prior art has the problem of non-uniform fin thickness.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Formation method of semiconductor structure
  • Formation method of semiconductor structure
  • Formation method of semiconductor structure

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0028] It can be seen from the background art that the fin field effect transistor in the prior art has the problem of insufficient fin thickness uniformity. The reasons for the uneven thickness of the fins are now analyzed in combination with the formation process of the fin field effect transistor in the prior art:

[0029] refer to Figure 1 to Figure 5 , shows a schematic cross-sectional structure corresponding to each step of a method for forming a semiconductor structure.

[0030] refer to figure 1 , forming a substrate 10, the substrate 10 has fins 11, and an isolation layer 12 is filled between adjacent fins 11, and the top surface of the isolation layer 12 is lower than the top surface of the fins 11.

[0031] continue to refer figure 1 , forming an oxide layer 13 covering the surface of the fin portion 11 .

[0032] refer to figure 2 and image 3 ,in image 3 yes figure 2 Schematic diagram of the cross-sectional structure along the line AA.

[0033] A dum...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a formation method of a semiconductor structure. The formation method comprises the steps that a substrate and a fin part are formed; an isolation layer is formed; a sacrificiallayer is formed; an oxide layer is formed on the surface of the fin part; a pseudo gate is formed on the fin part; the pseudo gate is removed and the oxide layer below the pseudo gate is exposed; andthe oxide layer is removed and the surface of the fin part is exposed. According to the technical scheme, the isolation layer is formed and then the side wall of the fin part contacted with the isolation layer is oxidized so that partial thickness of the fin part is converted into the sacrificial layer. The size of the covered part of fin part of the sacrificial layer in the direction perpendicular to the side wall of the fin part can be reduced by formation of the sacrificial layer so that the surface oxide layer of the fin part and the sacrificial layer are removed and then the exposed finpart has uniform size in the direction perpendicular to the side wall of the fin part, the uniformity of the formed fin part can be improved and the performance of the formed semiconductor structure can be enhanced.

Description

technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a method for forming a semiconductor structure. Background technique [0002] With the development of integrated circuits to ultra-large-scale integrated circuits, the circuit density inside the integrated circuit is increasing, and the number of components contained in the integrated circuit is also increasing, and the size of the components is also reduced. As the size of the MOS device decreases, the channel of the MOS device shortens accordingly. Due to the shortened channel, the slow-changing channel approximation of MOS devices is no longer valid, and various unfavorable physical effects (especially short channel effects) are highlighted, which degrades device performance and reliability and limits the size of the device. Zoom out further. [0003] In order to further reduce the size of MOS devices, people have developed a multi-faceted gate field effect transis...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/336H01L21/285
CPCH01L21/285H01L29/6681
Inventor 周飞
Owner SEMICON MFG INT (SHANGHAI) CORP