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MoO3/Al2O3 double-layer gate medium based diamond field effect transistor with zero gate-source distance and manufacturing method of field effect transistor

A field effect transistor, diamond technology, applied in transistors, semiconductor/solid state device manufacturing, semiconductor devices, etc., can solve the problem of not increasing the current, achieve high density and mobility, reduce gate leakage, and reduce conduction. The effect of resistance

Inactive Publication Date: 2018-04-17
XIDIAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Although the device structure with zero gate-source spacing can reduce the on-resistance, increase the output current and transconductance, the medium itself used in this report does not have the effect of increasing the current

Method used

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  • MoO3/Al2O3 double-layer gate medium based diamond field effect transistor with zero gate-source distance and manufacturing method of field effect transistor
  • MoO3/Al2O3 double-layer gate medium based diamond field effect transistor with zero gate-source distance and manufacturing method of field effect transistor
  • MoO3/Al2O3 double-layer gate medium based diamond field effect transistor with zero gate-source distance and manufacturing method of field effect transistor

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] Embodiment 1: making substrate is single crystal diamond, MoO 3 The thickness of the gate dielectric layer is 5nm, Al 2 o 3 A double-layer gate dielectric field effect transistor with a gate dielectric layer thickness of 5nm:

[0035] Step 1: Generate a hydrogen terminated surface on a single crystal diamond substrate.

[0036]Place the single crystal diamond substrate in the hydrogen plasma in the reaction chamber, flow into the reaction chamber a hydrogen gas with a flow rate of 500 sccm, set the pressure at 80 mbar, and stop for 5 minutes at a temperature of 800 ° C to generate on the diamond substrate hydrogen-terminated surface, the result is as Figure 4 (a).

[0037] Step 2: Grow a gold film on the surface of the hydrogen terminal.

[0038] A gold film with a thickness of 80nm is deposited on the surface of the hydrogen terminal by thermal evaporation process as a protective layer on the surface of the hydrogen terminal. The growth results are as follows: ...

Embodiment 2

[0048] Embodiment 2: making substrate is polycrystalline diamond, MoO 3 The thickness of the gate dielectric layer is 10nm, Al 2 o 3 A double-layer gate dielectric field effect transistor with a gate dielectric layer thickness of 15nm.

[0049] Step 1: Generating a hydrogen-terminated surface on a polycrystalline diamond substrate.

[0050] The single crystal diamond substrate is placed in the hydrogen plasma in the reaction chamber, the flow rate of 700sccm hydrogen gas is introduced into the reaction chamber, the pressure is set at 100mbar, and the temperature is 850°C, stop for 15min to generate on the diamond substrate hydrogen-terminated surface, the result is as Figure 4 (a).

[0051] Step 2: growing a gold film on the surface of the hydrogen terminal.

[0052] A layer of 100nm Au was deposited on the surface of hydrogen termination by thermal evaporation process to protect the surface of hydrogen termination. The results are as follows Figure 4 (b).

[0053] St...

Embodiment 3

[0062] Embodiment 3: making substrate is single crystal diamond, MoO 3 The thickness of the gate dielectric layer is 40nm, Al 2 o 3 Zero-gate-source pitch field effect transistor with a gate dielectric layer thickness of 50nm:

[0063] Step A: Place the single crystal diamond substrate in the hydrogen plasma in the reaction chamber, feed hydrogen gas with a flow rate of 1000sccm into the reaction chamber, set the pressure at 150mbar, and stop for 30min at a temperature of 950°C, so that the diamond A hydrogen-terminated surface is generated on the substrate, and the results are as follows Figure 4 (a).

[0064] Step B: Deposit a 180nm-thick gold film on the surface of the hydrogen terminal using electron beam evaporation technology to protect the surface of the hydrogen terminal. The results are as follows Figure 4 (b).

[0065] Step C: Spin-coat photoresist on the gold film, use a photolithography machine to expose, make an isolation area pattern, and then use a wet et...

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Abstract

The invention discloses a MoO3/Al2O3 double-layer gate medium based diamond field effect transistor with zero gate-source distance and a manufacturing method of the field effect transistor, and aims at solving the problems including high ON resistance is high, low output current and transconductance, and low breakdown characteristic in the prior art. The field effect transistor comprises a diamondsubstrate (1), a hydrogen terminal surface (2), source and drain electrodes (3), a gate medium (4) and a gate electrode (5). The source and drain electrodes (3) are positioned at the two sides of thehydrogen terminal surface (2) respectively. The gate medium (4) of a MoO3/Al2O3 double-layer structure is positioned on the hydrogen terminal surface (2) between the source and drain electrodes and covers part of surfaces of the source and drain electrodes. The lower half part of the gate electrode thereon is inlaid between the source and drain electrodes, and the upper half part covers the source and drain electrodes via the gate medium to form a T-shaped gate structure. The distance between the gate electrode and the source electrode and the distance between the gate electrode and the drainelectrode are zero. The field effect transistor is low in ON resistance, high in saturation current, transductance and breakdown characteristic, and can be applied to power devices, electric power and electronic devices, and the like.

Description

technical field [0001] The invention belongs to the technical field of microelectronic devices, in particular to a metal-insulating layer-semiconductor field effect transistor MISFET with zero gate-source spacing, which can be used as a power device, a digital logic circuit device or a power electronic device and the like. Background technique [0002] Diamond ultra-wide bandgap semiconductor materials have excellent physical properties such as high breakdown electric field, high carrier mobility, and extremely high thermal conductivity, and have broad application prospects in power devices and power electronic devices. However, the impurity currently available for diamond doping has a high activation energy, so the conductance of bulk doping is too small to be applied to electronic devices. Most of the reported diamond-based field-effect transistors use the hydrogenation of the diamond surface to adsorb active molecules or atomic groups in the air to induce two-dimensional ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/78H01L29/51H01L29/423H01L21/336
CPCH01L29/4236H01L29/517H01L29/66045H01L29/7827
Inventor 张金风徐佳敏任泽阳陈万娇张进成郝跃
Owner XIDIAN UNIV
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