Fin field effect transistor and method of forming the same

Abstract

A FinFET device and fabrication method thereof is provided. The fabrication method includes: providing a semiconductor substrate (101) with a fin (102) protruding from the semiconductor substrate, and a gate structure (110) across a length portion of the fin and covering a portion of the fin; etching a partial thickness of the fin on both sides of the gate structure to form grooves (201); forming a doped layer (211) in a bottom and sidewalls of the grooves; annealing the doped layer to allow the doping ions to diffuse into the fin and to form a lightly doped source / drain region (221); removing the doped layer after the annealing; and forming epitaxial layers to fill up the grooves.

Description

technical field [0001] The invention relates to the field of semiconductor technology manufacturing, in particular to a fin field effect transistor and a forming method thereof. Background technique [0002] With the continuous development of semiconductor process technology, the development trend of semiconductor process nodes following Moore's Law continues to decrease. In order to adapt to the reduction of process nodes, the channel length of MOSFET field effect transistors has to be continuously shortened. The shortening of the channel length has the advantages of increasing the die density of the chip and increasing the switching speed of the MOSFET field effect tube. [0003] However, as the channel length of the device is shortened, the distance between the source and the drain of the device is also shortened, so that the control ability of the gate to the channel becomes worse, and the gate voltage pinches off the channel. The difficulty is also increasing, making ...

AI Technical Summary

Problems solved by technology

[0005] However, the performance of the fin field effect transistor formed by the prior art needs to be further improved

Images