Method for pre-adjusting metal wire size
A technology of metal wires and metal wires, which is applied in semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., and can solve problems such as consuming manpower and material resources
Active Publication Date: 2018-05-15
SHANGHAI HUALI MICROELECTRONICS CORP
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Problems solved by technology
[0004] At present, the methods commonly used in the industry to regulate the size of metal wires in the copper interconnection process are as follows: figure 1 Shown: first adjust the width of the etched groove by adjusting the width of the photolithographic groove to achieve the purpose of adjusting the size of the copper wire; then adjust the content of the reaction by-products by adjusting the ratio of C / F gas during the etching process The size of the groove width after etching can achieve the purpose of adjusting the size of the copper wire, but the confirmation of the key dimensions of this method needs to be adjusted after the etching is completed.
Since the photolithography size and dry etching size will eventually have deviations, this method consumes a lot of manpower and material resources
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[0028] In the semiconductor manufacturing process, the final determination of the size of the metal wires in the back-end copper interconnection process is through the stable plasma formed by the photolithography patterned wafer in a high vacuum environment and the reactive etching gas excited by the radio frequency electric field. Areas of the wafer surface that are not covered by the mask undergo specific reactions, resulting in the desired dimensions. The present invention proposes: by calculating the length of the metal copper wire in a unit area, determining the etching dimension difference (CD bias), adjusting the critical dimension of photolithography in advance, and obtaining the required critical dimension after etching, so as to achieve the pre-regulated copper wire size the goal of.
[0029] The method for presetting the size of the metal wire of the present invention comprises the following steps:
[0030] Step 1: Predict the etching critical dimension difference ...
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The invention discloses a method for pre-adjusting the metal wire size. The length of the metal copper wires in the unit area of the corresponding layout before etching, and then the size difference (CD bias) after etching is determined, and the front-layer photoetching key size (CD) is adjusted in advance so as to obtain the key size after the required etching, namely the metal wire size. The metal wire size is predicted in advance, so that the cost is greatly saved.
Description
technical field [0001] The invention relates to a semiconductor integrated circuit method, in particular to a method for presetting the size of metal wires. Background technique [0002] Copper interconnection process refers to a new semiconductor manufacturing process technology that uses copper metal materials to replace traditional aluminum metal interconnection materials in the production of semiconductor integrated circuit interconnection layers. Since the use of copper interconnection wires can reduce the thickness of the interconnection layer, the distributed capacitance between the interconnection layers is reduced, thereby making it possible to increase the frequency. In addition, when the device density is further increased, there will be reliability problems caused by electron migration, and copper has a strong advantage over aluminum in this regard. Copper interconnection technology is mainly used in the preparation of microprocessors, high-performance memory an...
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IPC IPC(8): H01L21/60H01L21/027
CPCH01L21/027H01L24/44
Inventor 黄达斐昂开渠
Owner SHANGHAI HUALI MICROELECTRONICS CORP