apical modification cu 2 ZnO nanorod heterojunction of o and its preparation method and application

A nanorod, heterojunction technology, applied in chemical instruments and methods, chemical/physical processes, physical/chemical process catalysts, etc., can solve the problems of long time consumption, high reaction temperature, complex preparation process, etc., and achieve short time consumption. , the effect of few reaction steps and simple process

Active Publication Date: 2020-05-19
THE NAT CENT FOR NANOSCI & TECH NCNST OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

For example, the Chinese patent document CN102503169A uses a hydrothermal method to prepare Cu in the following order 2 O / ZnO heterojunction: ZnO seed crystal preparation → ZnO nanorods prepared by hydrothermal method → ​​Cu prepared by hydrothermal method 2 O, but its preparation process is complex, time-consuming, and the reaction temperature is high
ZnO / Cu in Chinese patent document CN102214734A 2 The preparation method of O heterojunction is relatively simple. A two-step electrochemical deposition method is used to prepare ZnO and Cu respectively. 2 O thin films, but obtained ZnO and Cu 2 The contact area between O and O is limited, and because ZnO does not have a one-dimensional ordered structure, it is not conducive to the directional transport and separation of photogenerated carriers.
Currently for top modified Cu 2 The preparation and application of O ZnO nanorod arrays have not been reported yet

Method used

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  • apical modification cu <sub>2</sub> ZnO nanorod heterojunction of o and its preparation method and application
  • apical modification cu <sub>2</sub> ZnO nanorod heterojunction of o and its preparation method and application
  • apical modification cu <sub>2</sub> ZnO nanorod heterojunction of o and its preparation method and application

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Effect test

Embodiment 1

[0039] The top modified Cu of the present invention 2 The preparation method of the ZnO nanorod heterojunction of O comprises the following steps:

[0040] A) Prepare 0.001mol L -1 Zn(NO 3 )·6H 2 O, 0.1mol L -1 KCl aqueous solution, the constant temperature of the solution was controlled at 70 °C, with FTO conductive glass as the substrate, platinum sheet as the counter electrode, and a saturated calomel electrode as the reference electrode, the constant potential deposition method was adopted, the applied potential was -1.0V, and the deposition time was controlled as After 150min, the ZnO nanorod arrays grown on the surface of FTO were obtained. The ZnO nanorods obtained above were thoroughly washed with water three times to remove residual ions on the surface and dried. The SEM image is as follows figure 1 As shown in a, the ZnO nanorods in the figure have a hexagonal prism structure with a diameter of 80-150 nm.

[0041] B) The preparation concentration is 0.001mol L ...

Embodiment 2

[0044] The top modified Cu of the present invention 2 The preparation method of the ZnO nanorod heterojunction of O comprises the following steps:

[0045] A) Prepare 0.05mol·L -1 ZnCl 2 , 0.05mol·L -1 Ethylenediamine aqueous solution, the constant temperature of the solution is controlled at 85°C, the FTO conductive glass is used as the substrate, the platinum sheet is used as the counter electrode, and the saturated calomel electrode is used as the reference electrode. The constant potential deposition method is adopted, and the applied potential is -1.1V to control the deposition. The time is 90 minutes, and the ZnO nanorod array grown on the surface of FTO is obtained. The ZnO nanorods obtained above are thoroughly washed with water three times to remove residual ions on the surface, and dried.

[0046] B) The preparation concentration is 0.0001mol L -1 CuCl 2 Aqueous solution, adding methanol with a mass fraction of 5%, adjusting the pH of the solution to 9.0 with Na...

Embodiment 3

[0049] The top modified Cu of the present invention 2 The preparation method of the ZnO nanorod heterojunction of O comprises the following steps:

[0050] A) Prepare 0.03mol·L -1 Zn(CH 3 COO) 2 , 0.03mol·L -1 Hexamethylenetetramine aqueous solution, the constant temperature of the solution is controlled at 80°C, the FTO conductive glass is used as the substrate, the platinum sheet is used as the counter electrode, and the saturated calomel electrode is used as the reference electrode. The constant potential deposition method is adopted, and the applied potential is -1.045 V, the deposition time is controlled to be 60min to obtain ZnO nanorod arrays grown on the surface of FTO, the ZnO nanorods obtained above are thoroughly washed with water three times to remove residual ions on the surface, and dried.

[0051] B) The preparation concentration is 0.001mol L -1 CuSO 4 Aqueous solution, adding methanol with a mass fraction of 5%, adjusting the pH of the solution to 9.0 wi...

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Abstract

The invention relates to a ZnO nanorod heterojunction with its top modified by Cu2O, and a preparation method and application thereof. The ZnO nanorod heterojunction is prepared by using a two-step method. The method comprises the following steps: preparing a ZnO nanorod on a conductive substrate by using a constant-potential deposition method; and then depositing Cu2O particles on the top of theprepared ZnO nanorod by using a photo-deposition method so as to obtain the ZnO nanorod heterojunction with its top modified by Cu2O. The method of the invention is simple and rapid in process, and the prepared heterojunction can effectively separate photon-generated carriers, responds to a visible light region, and has good application prospects in the fields of nano-heterojunction photocatalysisand photovoltaic materials, etc.

Description

technical field [0001] The invention belongs to the field of preparation of nanomaterials, in particular to a Cu 2 Preparation method of O / ZnO nanorod heterojunction, especially involving a top-modified Cu 2 Preparation method of O ZnO nanorod heterojunction. Background technique [0002] ZnO is an n-type semiconductor with a bandgap of generally 3.2eV. Due to its stability, non-toxicity, and abundant raw materials, ZnO is widely used in the fields of sensors, photocatalysis, and photovoltaics. ZnO nanorods have been widely studied and applied due to their single crystal structure, one-dimensional order, and high specific surface area, which are conducive to the directional transport of photogenerated carriers. However, due to its wide band gap, ZnO can only respond to ultraviolet light, which occupies a low share of solar energy, which greatly limits its wide application. In order to further improve the performance of the material system while maintaining the advantages ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B01J23/80
CPCB01J23/80B01J35/0033B01J35/004
Inventor 贺涛穆扎法尔·伊克巴尔王艳杰胡海峰
Owner THE NAT CENT FOR NANOSCI & TECH NCNST OF CHINA
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