A kind of preparation method of Cu2O nanometer array

Abstract

The invention discloses a preparation method of a Cu2O nano-array. The preparation method comprises the following steps: uniformly mixing 8.8mmol / L to 0.115mol / L of an NH4F solution, 7.54mol / L to 7.99mol / L of a glycerol water solution and 0.027mmol / L to 0.295mmol / L of a cetyl trimethyl ammonium bromide (CTAB) solution to prepare weak-acidic electrolyte; taking a Cu sheet as an anode and a Pt sheet as a cathode; oxidizing under anodic oxidation voltage of 15V to 35V for 2min to 18min, so as to obtain the Cu2O nano-array on the Cu sheet. The photovoltage of the Cu2O nano-array can reach 0.0801V to 0.2693V. The preparation method has the advantages of simple preparation process and short period; the thickness and photoelectric properties of the sample Cu2O nano-array can be effectively controlled through changing technological conditions.

Description

Technical field [0001] The invention relates to a Cu 2 O nanoarray preparation method. Background technique [0002] Cu 2 O is a monovalent oxide of copper, usually brick red powder, cubic crystal system. Under acidic conditions, the disproportionation reaction is prone to produce copper elemental and divalent copper ions. Cu 2 O has the advantages of low toxicity, low cost, easy preparation, visible light absorption and adjustable energy band, and shows great potential application value in solar energy conversion. In addition Cu 2 O can also be used to prepare ship bottom antifouling paint, colorants, magnetic storage, electrode materials. The energy band gap of cuprous oxide is about 2.2eV, and its crystal has good conductivity to holes. Therefore, under the irradiation of sunlight, cuprous oxide can generate photo-generated carriers, which are easily excited by visible light, which is a good Of inorganic oxide semiconductor materials. In theory, the photoelectric conversio...

AI Technical Summary

Problems solved by technology

Although the preparation of nano-Cu by vacuum evaporation 2 The purity of the O film is high, but the required technical equipment is high; the chemical vapor deposition method prepares nano-Cu 2 The reaction equipment required for O is expensive and the reaction parameters need to be precisely controlled; during the preparation process of the sol-gel method, the sol is easy to agglomerate, and the process parameters are not easy to control; although the magnetron sputtering method is simple, this high-energy deposition method is easy Causes loss to the surface of the formed film, and the uniformity of the film is poor; the thermal oxidation method prepares nano-cuprous oxide, and the reaction needs to be carried out at high temperature, which is not easy to achieve

The anodic oxidation method that the present invention adopts prepares Cu 2 O nanoarrays have not been reported yet