Rapid thermal annealing method

Abstract

The present invention provides a rapid thermal annealing method which comprises a step of providing a substrate, wherein impurity ions are implanted into the substrate, and the surface of the substrate has a naturally formed growth layer, and a step of introducing predetermined gas into a rapid thermal processing machine platform when the rapid thermal annealing process is executed on the substrate such that the gas reacts with the substrate to increase the thickness of the growth layer, and prevent the overflow of the impurity ions from the substrate by using the growth layer with increased thickness. A condition of the overflow of the implanted impurity ions from the substrate surface during the rapid thermal annealing caused by the too small thickness of the growth layer is avoided. Byusing the above rapid thermal annealing method, the conditions that an operator needs to shut down a machine and carry out problem analysis and troubleshooting on a machine platform or process due toion overflow are reduced, and the production efficiency is improved.

Description

Technical field [0001] The invention relates to the field of semiconductor manufacturing, in particular to a rapid thermal annealing method. Background technique [0002] The annealing process is an indispensable process in the field of semiconductor manufacturing. Its purpose is to repair the damage caused by high-energy ion bombardment on the surface of the silicon wafer after ion implantation, and at the same time, to make the implanted impurity ions enter the lattice position. Thereby, the implanted impurity ions are activated. With the progress of the annealing process, the rapid thermal annealing technology has gradually replaced the traditional furnace tube annealing technology because of its advantages of small thermal budget, less contamination and short annealing time. [0003] Under normal circumstances, before ion implantation, a masking layer is often formed on the surface of the substrate, which can prevent the channel effect during ion implantation and prevent the i...

AI Technical Summary

Problems solved by technology

[0004] Aiming at the problem that in the rapid thermal annealing process in the prior art, when the growth layer naturally formed on the surface of the substrate is used as the masking layer, the thickness is uncontrollable, and the problem that the ion overflow will occur if the thickness is too small, the present invention proposes a rapid thermal annealing method, It is characterized by including:

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