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Operation method for plasma gas scrubber

A technology of gas scrubber and plasma, which is applied in separation methods, chemical instruments and methods, gas treatment, etc., and can solve problems such as ignition time delay

Active Publication Date: 2018-06-05
三重核心科技株式会社
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0010] However, in the plasma scrubber directly connected to the chamber of the semiconductor process equipment operating under the actual vacuum state, when the scrubber is in operation, the process is affected by the change of the piping pressure, and at the same time, when the plasma is ignited , due to the unavoidable delay in ignition time, untreated unreacted gases such as PFC are discharged

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  • Operation method for plasma gas scrubber
  • Operation method for plasma gas scrubber
  • Operation method for plasma gas scrubber

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Embodiment Construction

[0018] Hereinafter, examples and embodiments of the present invention will be described in detail with reference to the accompanying drawings, so that those skilled in the art of the present invention can easily implement the present invention.

[0019] However, the present invention can be embodied in various forms, and the present invention is not limited to the examples and examples described below. In addition, in the drawings, in order to clearly describe the present invention, parts irrelevant to the description are omitted, and similar reference numerals are assigned to similar parts throughout the specification.

[0020] Throughout the present specification, when a part "includes" another part, as long as there is no special objection, it means that other structural elements can also be included, not because other structural elements are excluded.

[0021] The terms "about" and "actually" used in the entirety of this specification are the meanings of the numerical valu...

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Abstract

The invention provides an operation method for a plasma gas scrubber. The plasma gas scrubber comprises a reactor and a to-be-treated gas inflow pipeline, wherein the reactor is connected with an exhausting pipeline of a process chamber so as to realize treatment of exhaust gas from the process chamber and is used for a plasma reaction, and the to-be-treated gas inflow pipeline is used for supplying to-be-treated gas to the reactor. The operation method for the plasma gas scrubber comprises the following steps: producing plasma at a time 0.5 to 1.5 seconds before the operation of the process chamber; and allowing the to-be-treated gas to flow into the reactor of the plasma gas scrubber when or after the process chamber begins to operate.

Description

technical field [0001] The present invention relates to a method for operating a plasma gas scrubber, and more specifically, relates to a method for operating a plasma gas scrubber that prevents reduction in efficiency of gas cleaning due to plasma ignition delay by performing plasma ignition in advance before a semiconductor process such as etching . Background technique [0002] Using highly reactive chemical species generated by plasma for surface treatment of metals or polymers, etching of various electrolytes such as silicon wafers and glass, and plasma chemical vapor deposition technology. Due to the need for miniaturization and lowering of the temperature of the process, the plasma that is actively used in industry is low-pressure plasma, and the above-mentioned low-pressure plasma is effective for etching and vapor deposition in semiconductor processes, and surface treatment of metals and polymers. , synthesis of new substances, etc. [0003] Plasma can occur in va...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B01D53/32B01D53/68
CPCB01D53/32B01D53/68B01D2257/204B01D2257/2066B01D2258/0216B01D2259/818
Inventor 金翼年姜成玉
Owner 三重核心科技株式会社