A projection exposure device and exposure method
An exposure device and projection technology, applied in the field of photolithography, can solve the problems of long time-consuming alignment process and low work efficiency, and achieve the effects of improving the flexibility of space layout, reducing time consumption, and improving detection efficiency
Active Publication Date: 2019-09-17
SHANGHAI MICRO ELECTRONICS EQUIP (GRP) CO LTD
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Problems solved by technology
[0004] The present invention provides a projection exposure device and an exposure method to solve the problems of long time consumption and low work efficiency in the alignment process existing in the prior art
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[0030] The present invention is described in detail below in conjunction with accompanying drawing:
[0031] Such as Figure 2-4 As shown, a projection exposure device of the present invention includes an illumination light source 1, a reticle 2, a mask table 3, a projection objective lens array 4, an alignment measurement system array 5, and a workpiece table 6 arranged in sequence along the optical path direction. A glass substrate 7 is provided on the stage 6, and the alignment measurement system 501 in the alignment measurement system array 5 corresponds to the projection objective lens 401 in the projection objective lens array 4 one by one, and the glass substrate 7 is provided with two rows The alignment mark arrays are respectively the first alignment mark array 81 and the second alignment mark array 82, and the distance between two adjacent alignment marks in the alignment mark array is the same as that in the alignment measurement system array 5. The distance betwee...
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The invention discloses a projection exposure apparatus and exposure method. The projection exposure apparatus comprises an illumination light source, a mask plate, a mask table, a projection lens array, an alignment measurement system array and a workpiece stage, which are successively arranged along an optical path direction in sequence, wherein a glass substrate is arranged on the workpiece stage; alignment measurement systems in the alignment measurement system array is in one-to-one correspondence with projection lens in the projection lens array; two rows of alignment mark arrays are arranged on the glass substrate; and the distance between every two adjacent alignment marks in the alignment mark arrays is identical to the distance between every two adjacent alignment measurement systems in the alignment measurement system array. The projection exposure apparatus and exposure method of the invention improve the spatial layout flexibility of the alignment marks and the alignment measurement systems and reduce the number of the alignment marks and the alignment measurement systems; and since the number of the alignment measurement systems is identical to the number of the projection lens, and time for alignment is reduced and detection efficiency is improved.
Description
technical field [0001] The invention relates to the technical field of photolithography, in particular to a projection exposure device and an exposure method. Background technique [0002] TFT is the abbreviation of Thin Film Transistor (Thin Film Field Effect Transistor), which is a large-scale semiconductor full integrated circuit manufacturing technology using new materials and new processes. TFT is formed on non-single wafers such as glass or plastic substrates (of course, it can also be on wafers) through sputtering and chemical deposition processes to form various films necessary for manufacturing circuits, and to manufacture large-scale semiconductor integrated circuits (LSIC) through film processing. . With the development of related electronic consumer products, the size of TFT is required to be larger and more integrated units, it is difficult for a single lighting system to meet the requirements of TFT lithography. Generally, the largest illumination field of vi...
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IPC IPC(8): G03F7/20G03F9/00
Inventor 陈跃飞陈飞彪于大维潘炼东
Owner SHANGHAI MICRO ELECTRONICS EQUIP (GRP) CO LTD