UV photodetector based on pt nanoparticles modified gan nanowires and its manufacturing method
A nanoparticle and electrical detector technology, applied in the field of photodetectors, can solve the problems of limiting the application of GaN nanowire ultraviolet detectors, low photoresponsivity and external quantum efficiency, and complicated preparation of ultraviolet photodetectors, achieving improved Effect of photocurrent and photoresponsivity, good crystal quality and absorptivity, good photocurrent stability
Active Publication Date: 2019-10-22
INST OF METAL RESEARCH - CHINESE ACAD OF SCI
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Problems solved by technology
However, ultraviolet photodetectors based on 1DGaN nanowires still have disadvantages such as complex preparation, poor wavelength selectivity, low photoresponsivity and external quantum efficiency, and are difficult to industrialize.
This greatly limits the application of GaN nanowire UV detectors in future nanodevices
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[0040] In this embodiment, the method for manufacturing an ultraviolet photodetector based on Pt nanoparticles modifying GaN nanowires, the specific steps are as follows:
[0041] 1) First, Pt nanoparticles were prepared by an oil bath method. 0.1377g of H 2 PtCl 4 Dissolve in 40 ml of ethylene glycol and stir magnetically at room temperature for 30 min. NaOH solution was added dropwise to dissolve the H 2 PtCl 4 The pH of the ethylene glycol solution was adjusted to 9. in N 2 Heat under reflux in an oil bath at 160° C. for 4 hours under gas protection. After natural cooling, the Pt nanoparticle colloidal solution with a concentration of 1 mg / ml was obtained for subsequent use;
[0042] 2) Then, using the chemical vapor deposition (CVD) method, with high-purity Ga 2 o 3 powder (purity 99.999wt%) and ammonia (NH 3 ) were used as Ga source and N source respectively to prepare GaN nanowires. high purity Ga 2 o 3 powder on Al 2 o 3 The crucible is placed in the cent...
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Abstract
The invention relates to an ultraviolet photodetector based on Pt nanoparticle-modified GaN nanowires and a manufacturing method of the ultraviolet photodetector and belongs to the photodetector field. According to the ultraviolet photodetector based on the Pt nanoparticle-modified GaN nanowires and the manufacturing method of the ultraviolet photodetector of the present invention, a GaN nanowirearray is grown on a sapphire substrate through a chemical vapor deposition technique; a layer of Pt nanoparticles is deposited on the GaN nanowire array; and a metal electrode layer is deposited at each of two ends of a single GaN nanowire on which Pt nanoparticles are deposited. The optoelectronic performance test results of the ultraviolet detector shows that the ultraviolet photodetector with the Pt nanoparticle modified GaN nanowires has higher photocurrent, higher photoresponsivity, higher external quantum efficiency, higher on / off ratio, higher light opening speed and better photocurrentstability compared with an ultraviolet photodetector with no Pt nanoparticle modified GaN nanowires, and therefore, the ultraviolet photodetector with the Pt nanoparticle modified GaN nanowires has agreat application potential. The device of the invention has the advantages of simple manufacturing process, high repeatability, high process controllability, and low cost.
Description
technical field [0001] The invention relates to an ultraviolet photodetector based on Pt nanoparticle-modified GaN nanowires and a manufacturing method thereof, belonging to the field of photodetectors. Background technique [0002] The semiconductor ultraviolet photodetector is a detector made of the absorption of ultraviolet light by semiconductors and the resulting photoconductivity and photovoltaic effects. It is an important photon-electron conversion device. In today's information society, core devices are the cornerstone of informatization. As one of the important components of the core device, the ultraviolet photodetector has naturally attracted widespread attention. It is widely used in light wave communication, imaging technology, photoelectric circuit, future optical storage, space exploration, environmental monitoring, biological , medical and military and other important fields. Today's popular smartphones also integrate a large number of ultraviolet photodet...
Claims
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IPC IPC(8): H01L31/0304H01L31/108H01L31/18B82Y20/00
CPCB82Y20/00H01L31/03042H01L31/03044H01L31/1085H01L31/1856Y02P70/50
Inventor 刘宝丹张兴来刘青云杨文进李晶刘鲁生姜辛
Owner INST OF METAL RESEARCH - CHINESE ACAD OF SCI