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A high-frequency high-voltage diode and its manufacturing method

A high-frequency high-voltage, diode technology, applied in the field of diodes, can solve problems such as low reverse voltage, and achieve the effects of low cost, easy implementation, and wide adaptability

Active Publication Date: 2020-07-03
重庆平伟伏特集成电路封测应用产业研究院有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, due to the thin reverse barrier of the Schottky diode, the reverse voltage is relatively low, and it is generally not higher than 300V under the existing process conditions.

Method used

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  • A high-frequency high-voltage diode and its manufacturing method
  • A high-frequency high-voltage diode and its manufacturing method

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Embodiment Construction

[0028] Embodiments of the present invention are described in detail below, examples of which are shown in the drawings, wherein the same or similar reference numerals designate the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the figures are exemplary only for explaining the present invention and should not be construed as limiting the present invention.

[0029] In describing the present invention, it should be understood that the terms "longitudinal", "transverse", "upper", "lower", "front", "rear", "left", "right", "vertical", The orientation or positional relationship indicated by "horizontal", "top", "bottom", "inner", "outer", etc. are based on the orientation or positional relationship shown in the drawings, and are only for the convenience of describing the present invention and simplifying the description, rather than Nothing indicating or implying that a referenced device or elem...

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Abstract

The invention discloses a high-frequency high-voltage diode and a manufacturing method thereof. The diode comprises X diode chips and Y Schottky chips, and X and Y are positive integers; all the diodechips and the Schottky chips are in series connection, and the electric conduction directions of the diode chips and the Schottky chips are same; the diode further comprises a plastic package layer which wraps the diode chips and the Schottky chips and a wire lead which extends outward. The high-frequency high-voltage diode has the advantages of high back pressure and extremely-quick switch.

Description

technical field [0001] The invention relates to the technical field of diodes, in particular to a high-frequency high-voltage diode and a manufacturing method thereof. Background technique [0002] Electronic information technology is the fastest growing industry in recent years. As one of the essential electronic components in electronic circuits, semiconductor rectifiers have also been rapidly developed and widely used. With the emergence and application of various high-voltage and high-frequency circuits , The rectifier diode with high reverse voltage and extremely fast switching characteristics is a variety with wider application prospects at present, and it also puts forward higher requirements for related performance. [0003] The chip with PN junction structure is a commonly used rectifier diode chip, which has a high reverse breakdown voltage. It is often used in general low-frequency rectification circuits and is not suitable for high-frequency circuits. This is due...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/50H01L23/31H01L23/535
CPCH01L21/50H01L23/31H01L23/535H01L2224/33
Inventor 王兴龙王利军邓令刘章利
Owner 重庆平伟伏特集成电路封测应用产业研究院有限公司