A kind of method for preparing tin diselenide nanowire at low temperature

A technology of tin diselenide and nanowires, applied in binary selenium/tellurium compounds, nanotechnology, metal selenide/telluride, etc., can solve problems such as toxic pollutants, complex synthesis process, etc., and achieve easy surface modification , the operation procedure is simple, the synthesis cost is low

Active Publication Date: 2021-10-26
TAIYUAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

So far, the synthesis of tin diselenide single crystal nanomaterials mainly adopts the method of high temperature and high pressure, the synthesis process is complicated, and toxic pollutants will be produced during the synthesis process
There are few reports on the preparation of tin diselenide nanowires, and there is no report on the synthesis of tin diselenide nanowires under low temperature conditions.

Method used

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  • A kind of method for preparing tin diselenide nanowire at low temperature
  • A kind of method for preparing tin diselenide nanowire at low temperature
  • A kind of method for preparing tin diselenide nanowire at low temperature

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0019] The concrete synthesis method of tin diselenide nanowire material: the raw material of synthesizing tin diselenide nanowire material is ethanol, hydrazine hydrate, tin tetrachloride, sodium selenite, ammonia water, and the reaction that takes place is as follows:

[0020]

[0021] The specific operation steps are as follows:

[0022] Step 1, by weight percentage, ethanol is 40% and hydrazine hydrate is 60% and is weighed and mixed as a reaction solvent.

[0023] Step 2, weighing 40% by weight of tin tetrachloride and 60% by weight of sodium selenite as reactants.

[0024] Step 3, preparing an ammonia solution, by dissolving the ammonia solution in an appropriate amount of water so that the final pH value is 8-10.

[0025] Step 4, heating the reaction, taking the reaction raw materials and reaction solvent added to the reaction vessel as the total weight, the reaction raw materials with a weight percentage of 0.5% and the reaction solvent with a weight ratio of 99.5%...

Embodiment 2

[0029] The raw materials for synthesizing tin diselenide nanowire materials are ethanol, hydrazine hydrate, tin tetrachloride, potassium selenite, and ammonia water, and the reactions that take place are as follows:

[0030]

[0031] The specific operation steps are as follows:

[0032] Step 1, 60% ethanol and 40% hydrazine hydrate are weighed and mixed as a reaction solvent by weight percentage.

[0033] Step 2, weighing 60% by weight of tin tetrachloride and 40% by weight of potassium selenite as reactants.

[0034] Step 3, preparing an ammonia solution, by dissolving the ammonia solution in an appropriate amount of water so that the final pH value is 8-10.

[0035] Step 4, heat the reaction, take the reaction raw materials and reaction solvent added to the reaction vessel as the total weight, prepare the reaction raw materials with a weight percentage of 10% and the reaction solvent with a weight ratio of 90%, and put the noble metal inert to the reaction solution toget...

Embodiment 3

[0039] The raw materials for synthesizing tin diselenide nanowire materials are ethanol, hydrazine hydrate, tin tetrachloride, potassium selenite, and ammonia water, and the reactions that take place are as follows:

[0040]

[0041] The specific operation steps are as follows:

[0042] Step 1, 50% by weight of ethanol and 50% of hydrazine hydrate are weighed and mixed as a reaction solvent.

[0043] Step 2, weighing 50% by weight of tin tetrachloride and 50% by weight of potassium selenite as reactant.

[0044] Step 3, preparing an ammonia solution, by dissolving the ammonia solution in an appropriate amount of water so that the final pH value is 8-10.

[0045] Step 4, heat the reaction, take the reaction raw materials and reaction solvent added to the reaction vessel as the total weight, prepare the reaction raw materials with a weight percentage of 5% and the reaction solvent with a weight ratio of 95%, and put the noble metal inert to the reaction solution together Ad...

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Abstract

The invention discloses a method for preparing tin diselenide nanowires at low temperature, which belongs to the technical field of inorganic compound semiconductor nanomaterials; the synthesis of tin diselenide nanowire materials by solvothermal method only needs to be carried out at a relatively low temperature of 100-120°C Use cheap and simple raw materials: inorganic salt, ethanol, hydrazine hydrate, and ammonia water for one-step synthesis; simple operation, fewer controllable parameters in the synthesis process, and low synthesis cost; the prepared tin diselenide nanowire material is free in the solution Dispersed development and growth, with one-dimensional current morphology, and good crystallization; no surfactant or template agent was introduced during the synthesis process, the process is pollution-free, and the surface of nanowires is clean, suitable for the study of its physical properties, and it is also easy to conduct surface research. modified.

Description

technical field [0001] The invention belongs to the technical field of inorganic compound semiconductor nanomaterials, and in particular relates to a method for preparing tin diselenide nanowires, in particular to a method for preparing tin diselenide nanowires by a low-temperature solvothermal method. Background technique [0002] Semiconductor photoelectric sensors are widely used in modern electronic systems and are indispensable basic devices in modern intelligent sensing systems. As an important IV-VI semiconductor material, tin diselenide has an indirect band gap of about 1 eV and a direct band gap of about 1.5 eV, which can absorb most of the solar spectrum, so it is a typical excellent visible light Photoelectric sensing materials are widely used in infrared photoelectric instruments, memory switches, solid phase media of holograms, etc. So far, the synthesis of tin diselenide single crystal nanomaterials mainly adopts the method of high temperature and high pressur...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B19/04B82Y40/00
CPCB82Y40/00C01B19/007C01P2002/72C01P2004/03C01P2004/04C01P2004/16
Inventor 张虎林袁仲云禚凯曹胜利
Owner TAIYUAN UNIV OF TECH
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