A detection method for detecting short circuit in polysilicon

Abstract

The invention provides a detection method for detecting a short-circuit condition of polysilicon, applied to polysilicon short-circuit detection in a semiconductor device, wherein the detection methodcomprises the steps of etching a dielectric layer to form a contact hole, wherein the contact hole is connected with a partial gate pattern, a partial source region and a partial drain region; forming a first metal layer on the dielectric layer and removing the first metal layer which covers the dielectric layer and forming multiple grooves in an insulating layer; filling the grooves with a second metal layer to form a first test structure; performing detection on the first test structure through first detection equipment to obtain a first detection result; performing grinding on the second metal layer to inject ion combination to a well region in a substrate to form a second test structure; and performing test on the second test structure through second detection equipment to obtain a second test result, wherein the second test result is used for showing whether the second test structure result is qualified or not. By virtue of the detection method, the problem of more defects causedby only taking the thickness of the dielectric layer on the polysilicon as the technical detection index in the prior art is overcome.

Description

Technical field [0001] The invention relates to the field of semiconductor preparation, in particular to a detection method for detecting whether polysilicon is short-circuited. Background technique [0002] With the development of integrated circuit technology, the window control of semiconductor technology is becoming more and more precise, and small process deviations will cause serious yield loss, such as the short circuit between the metal and polysilicon in the semiconductor device, such as figure 1 Shown are the failure distribution and failure analysis results caused by the short circuit between the metal and polysilicon in the back stage of semiconductor production. The failure analysis results show that the lack of a dielectric layer between the metal and polysilicon makes the two short circuits. This problem is in different sizes. Will appear in all device processes, especially in processes below 28nm, this problem is particularly obvious. [0003] The traditional method...

AI Technical Summary

Problems solved by technology

[0003] The traditional method of monitoring or testing this problem is carried out in the final yield stage. The online monitoring method mainly uses the thickness of the dielectric layer on the polysilicon as a technical detection index. However, there are many problems in the detection method, such as the inability to The problems that are well solved are the low measurement accuracy at the relative edge of the wafer and the inability to evaluate the OX loss caused by subsequent etching and other processes.

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