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A Reverse Resistance Power MOSFET Device

A reverse-resistance, power technology, used in semiconductor devices, electrical components, transistors, etc., can solve problems such as increased on-resistance, and achieve the effects of reducing thickness, low on-resistance, and preventing punch-through effects.

Inactive Publication Date: 2020-07-10
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in order to ensure that the reverse resistance type power MOSFET does not have a punch-through breakdown between the body region of the source end and the Schottky junction of the drain end during forward and reverse withstand voltages, it must have sufficient length of the drift region, while increasing the length of the drift region means an increase in on-resistance

Method used

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  • A Reverse Resistance Power MOSFET Device
  • A Reverse Resistance Power MOSFET Device
  • A Reverse Resistance Power MOSFET Device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0017] A reverse-resistance power MOSFET device, comprising a metallized drain 1, an N-type drift region 4, and a metallized source 16 stacked sequentially from bottom to top; the lower surface of the N-type drift region 4 is a back surface structure, so The back structure includes: an N-type lightly doped region 2, an N-type forward field stop layer 3, and a first trench 9. The lower surface of the N-type lightly doped region 2 is formed with the upper surface of the metallized drain 1. Schottky contact, the lower surface of the N-type forward field stop layer 3 is in contact with the upper surface of the N-type lightly doped region 2, the lower surface of the first trench 9 is in contact with the upper surface of the metallized drain 1 contact, the first trench 9 is filled with a first oxide layer 10, and the first oxide layer 10 is provided with a polysilicon field plate 11, and the polysilicon field plate 11 is in direct contact with the upper surface of the metallized drai...

Embodiment 2

[0024] The difference between this embodiment and Embodiment 2 is that: the lower surface of the P-type buried layer 13 is in direct contact with the upper surface of the first trench 9 .

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Abstract

The present invention provides a reverse-resistance power MOSFET device, which includes a metallized drain, an N-type drift region, and a metallized source stacked sequentially from bottom to top; the lower surface of the N-type drift region is a back structure, and the back structure includes: The N-type lightly doped region, the N-type forward field stop layer, and the first trench, the first trench runs through the N-type lightly doped region, the N-type forward field stop layer vertically upwards from the upper surface of the metallized drain The layer extends into the N-type drift region; the upper surface of the N-type drift region is a front structure, and the front structure includes: an N-type reverse field stop layer, a P-type body region, a second trench, and a P-type buried layer; the second trench From the lower surface of the metallized source, vertically and downwardly through the N-type source region, the P-type body region, and the N-type reverse field stop layer extending into the N-type drift region; the structure provided by the present invention has reverse blocking capability, and at the same time The existence of the field stop layer prevents the punch-through effect of the electric field in the drift region, reduces the thickness of the drift region, and enables the device to obtain a lower on-resistance.

Description

technical field [0001] The invention relates to power semiconductor technology, in particular to a reverse resistance power MOSFET. Background technique [0002] Power MOSFET (Metal Oxide Semiconductor Field Effect Transistor) has the advantages of high switching speed, low switching loss, and low driving loss, and plays an important role in various electric energy conversions, especially in high-frequency electric energy conversions. Power conversion usually includes several conversion methods from alternating current to direct current (AC-DC), direct current to alternating current (DC-AC), direct current to direct current (DC-DC) and alternating current to alternating current (AC-AC). AC-AC can use indirect conversion, that is, AC-DC-AC, or direct conversion, that is, AC-AC. Because the AC-DC-AC indirect conversion system requires a large-capacity connection capacitor (voltage-type conversion) or a large-inductance connection inductance (current-type conversion) to connec...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L27/088H01L29/06
CPCH01L27/088H01L29/0619
Inventor 任敏杨梦琦王梁浩李泽宏高巍张金平张波
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA