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A reverse resistance type vdmos device

A reverse-resistance device technology, applied in the field of power semiconductors, can solve the problems of increased on-resistance, achieve the effects of reduced thickness, low on-resistance, and prevention of punch-through effects

Inactive Publication Date: 2020-07-31
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, in order to ensure that the reverse-resistance VDMOS device does not have a punch-through breakdown between the body region of the source end and the Schottky junction of the drain end during forward and reverse withstand voltages, it must have sufficient length of the drift region, while increasing the length of the drift region means an increase in on-resistance

Method used

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  • A reverse resistance type vdmos device
  • A reverse resistance type vdmos device
  • A reverse resistance type vdmos device

Examples

Experimental program
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Effect test

Embodiment 1

[0018] A reverse-resistance VDMOS device, comprising a metallized drain 1, an N-type lightly doped region 2, an N-type drift region 4, and a metallized source 13 stacked sequentially from bottom to top; the N-type lightly doped region The lower surface of 2 is in direct contact with the upper surface of the metallized drain 1 and forms a Schottky contact; the lower surface of the N-type drift region 4 has an N-type forward field stop layer 3, and the forward field stop layer 3 Located directly above the N-type lightly doped region 2 and in direct contact with the N-type lightly doped region 2; the upper surface of the N-type drift region 4 has an N-type reverse field stop layer 5, a P-type body region 6, a trench groove 10; the upper surface of the N-type reverse field stop layer 5 is in contact with the lower surface of the P-type body region 6; the upper surface of the P-type body region 6 also has an N-type source region 8 and a P-type contact region 7 , the N-type source r...

Embodiment 2

[0024] Such as Figure 4 As shown, the difference between this embodiment and Embodiment 2 is that: the bottom of the P-type pillar 9 has an insulating layer 14, the lower surface of the insulating layer 14 is in direct contact with the metallized drain 1, and the side surface of the insulating layer 14 is in contact with the metallized drain 1. The N-type lightly doped region 2 is in contact with each other. It can further reduce the reverse leakage of the Schottky junction during reverse blocking.

[0025] The silicon material in the device is replaced by silicon carbide, gallium arsenide, indium phosphide or silicon germanium semiconductor materials.

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Abstract

The invention provides a reverse-resistance VDMOS device, which comprises a metallized drain, an N-type drift region, and a metallized source stacked sequentially from bottom to top; the lower surface of the N-type drift region has an N-type positive field stop layer, The upper surface of the N-type drift region has an N-type reverse field stop layer, a P-type body region, and a groove, and the groove runs through the N-type source region, the P-type body region, and the N-type body region vertically downward from the lower surface of the metallized source. The N-type reverse field blocking layer extends into the N-type drift region; there is also a P-type column in the N-type drift region, the upper surface of the P-type column is in contact with the lower surface of the trench, and the lower surface of the P-type column is lightly doped with the N-type The upper surface of the region is in contact; a reverse-resistance VDMOS device provided by the present invention has reverse blocking capability, and the existence of the field stop layer prevents the punch-through effect of the electric field in the drift region, reduces the thickness of the drift region, and enables the device to obtain a higher low on-resistance.

Description

technical field [0001] The invention relates to power semiconductor technology, in particular to a reverse resistance VDMOS device. Background technique [0002] VDMOS (Vertical Double Diffused Metal Oxide Semiconductor Field Effect Transistor) has the advantages of high switching speed, low switching loss, and low driving loss, and plays an important role in various power conversions, especially high-frequency power conversions. Power conversion usually includes several conversion methods from alternating current to direct current (AC-DC), direct current to alternating current (DC-AC), direct current to direct current (DC-DC) and alternating current to alternating current (AC-AC). AC-AC can use indirect conversion, that is, AC-DC-AC, or direct conversion, that is, AC-AC. Because the AC-DC-AC indirect conversion system requires a large-capacity connection capacitor (voltage-type conversion) or a large-inductance connection inductance (current-type conversion) to connect two...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/78
CPCH01L29/7802
Inventor 任敏苏志恒杨梦琦李泽宏高巍张金平张波
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA