Surface trap energy level distribution measuring device and photoconduction analysis method

Abstract

The invention belongs to the field of surface trap energy level distribution measurement, and provides a surface trap energy level distribution measuring device and a photoconduction analysis method.According to the device, sample surface trap energy level distribution is achieved. The testing device comprises a vacuum constant-temperature cavity, a vacuum pump, a temperature control system, a fixed laser, a digital voltage-current meter source meter and a computer, the digital voltage-current meter source meter applies constant preset voltage at two ends of a sample to tested, dark current is measured, photoconduction testing is performed, a photoelectric attenuation curve is measured, and the sample surface trap energy level distribution is calculated according to the photoelectric attenuation curve. The constant-temperature cavity provides a dark and constant-temperature vacuum environment, interference of temperature, atmosphere and external light sources is effectively avoidedin the integrated measurement process, measuring accuracy is greatly improved, a sub-forbidden band laser excites to obtain a photoconduction curve, distribution of defects in a forbidden band can beaccurately responded, and the effect of the intrinsic defects is eliminated.

Description

technical field [0001] The invention belongs to the field of trap energy level distribution measurement, in particular to a surface trap energy level distribution test device and a photoconductive analysis method. Background technique [0002] With the development of industrialization and the advancement of science and technology, transition metal oxide materials play a very important role in the semiconductor industry. The physical properties of the material are closely related to the surface structure. The change of the surface structure will inevitably lead to the change of the physical properties of the material. The introduction of defects on the surface of the material can significantly improve the physical properties of the material; and transition metal oxides have various structures and valence states. It has great tolerance for the introduction of defects, so it has become the main research object of surface modification. Ion implantation is a commonly used method...

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Problems solved by technology

For example, the publication number is: CN 104714165 B, and the invention title is: the photoconductive analysis method of interface trap energy level distribution discloses a photoconductive analysis method of interface trap energy level distribution. The invention is based on the Schottky structure. The test sample is irradiated with a laser with an energy greater than the forbidden band width, and the test in the atmospheric environment is suitable for the interface between two materials; however, the measurement of the trap energy level distribution on the surface of the material cannot be carried out in the atmospheric environment, because the sample The gas adsorption on the surface will affect the accuracy of the measurement; moreover, the single surface of the material cannot form a Schottky barrier contact, so that this method cannot accurately reflect the information of the sample surface and is no longer applicable

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